DMN31D5UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D BV R max DSS DS(ON) Very Low Gate Threshold Voltage, 1.0V Max T = +25C A Low Input Capacitance 1.5 V = 4.5V GS Fast Switching Speed 2.0 V = 2.5V GS Ultra-Small Surface Mount Package 1mm x 1mm 30V 0.22A 3.0 V = 1.8V GS ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 4.5 V = 1.5V GS Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance Case: SOT963 (RDS(ON)) and yet maintain superior switching performance, making it Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. General Purpose Interfacing Switch e3 Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.027 grams (Approximate) Analog Switch D1 D G S SOT963 1 2 2 G1 Gate Protection Gate Protection S G D ESD PROTECTED 1 1 2 S1 Diode Diode Top View Top View Q1 N-CHANNEL Q2 N-CHANNEL Pin out Ordering Information (Note 4) Part Number Case Packaging DMN31D5UDJ-7 SOT963 10k/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN31D5UDJ Maximum Ratings N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 220 A Continuous Drain Current (Note 5) V = 4.5V I mA GS D State 160 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 200 mA I S Pulsed Drain Current (Note 6) mA I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 350 mW D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 361 C/W JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 100 nA V = 24V, V = 0V C DSS DS GS Gate-Source Leakage I 10 A V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 1.0 V V = V , I = 250A GS(TH) DS GS D 0.9 1.5 V = 4.5V, I = 100mA GS D 1.0 2.0 VGS = 2.5V, ID = 50mA Static Drain-Source On-Resistance R DS(ON) 1.2 3.0 V = 1.8V, I = 20mA GS D 1.4 4.5 V = 1.5V, I = 10mA GS D Diode Forward Voltage 0.6 1.0 V V V = 0V, I = 10mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 22.6 pF C iss V = 15V, V = 0V, DS GS Output Capacitance C 2.68 pF oss f = 1.0MHz Reverse Transfer Capacitance C 1.8 pF rss Total Gate Charge Q 0.38 nC g V = 4.5V, V = 15V, GS DS Gate-Source Charge Q 0.05 nC gs I = 200mA D Gate-Drain Charge Q 0.07 nC gd Turn-On Delay Time t 3.2 ns D(ON) Turn-On Rise Time 2.2 ns t V = 15V, V = 4.5V, R DD GS Turn-Off Delay Time 21 ns R = 2, I = 200mA t G D D(OFF) Turn-Off Fall Time 7.5 ns t F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMN31D5UDJ April 2017 Diodes Incorporated www.diodes.com Document number: DS39629 Rev. 2 - 2