DMP2022LSS SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 13m V = -10V Case Material: Molded Plastic, Green Molding Compound. GS UL Flammability Classification Rating 94V-0 16m V = -4.5V GS Moisture Sensitivity: Level 1 per J-STD-020 22m V = -2.5V GS Terminals Connections: See Diagram Low Gate Threshold Voltage Terminals: Finish - Matte Tin annealed over Copper lead frame. Low Input Capacitance Solderable per MIL-STD-202, Method 208 Fast Switching Speed Marking Information: See Page 4 Low Input/Output Leakage Ordering Information: See Page 4 Lead Free By Design/RoHS Compliant (Note 2) Weight: 0.072g (approximate) Gree Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability SO-8 S D S D S D G D TOP VIEW TOP VIEW Internal Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage -20 V V DSS Gate-Source Voltage V V 12 GSS Drain Current (Note 1) Steady T = 25C -10 A I A D State -8 T = 70C A Pulsed Drain Current (Note 3) I -35 A DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) P 2.5 W D Thermal Resistance, Junction to Ambient 50 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 1. Device mounted on 2 oz. Copper pads on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width 10S, Duty Cycle 1%. 4. Diodes Inc. sGree policy can be found on our website at DMP2022LSS Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage -20 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -20V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V -0.6 0.77 -1.1 V V = V , I = -250A GS(th) DS GS D 8 13 V = -10V, I = -10A GS D Static Drain-Source On-Resistance 11 16 R m V = -4.5V, I = -9A DS (ON) GS D 17 22 V = -2.5V, I = -8A GS D Forward Transconductance g 28 S V = -10V, I = -10A fs DS D Diode Forward Voltage (Note 5) V -0.5 0.68 -1.2 V V = 0V, I = -3A SD GS S DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance 2444 pF C iss V = -10V, V = 0V DS GS Output Capacitance 594 pF C oss f = 1.0MHz Reverse Transfer Capacitance C 556 pF rss Gate Resistance 2.0 R V = 0V V = 0V, f = 1MHz G GS DS SWITCHING CHARACTERISTICS (Note 6) 28.1 V = -10V, V = -4.5V, I = -10A DS GS D Total Gate Charge Q g 56.9 V = -10V, V = -10V, I = -10A DS GS D nC Gate-Source Charge Q 3.4 V = -10V, V = -10V, I = -10A gs DS GS D Gate-Drain Charge Q 11.9 V = -10V, V = -10V, I = -10A gd DS GS D Turn-On Delay Time 7.5 15 t D(on) Turn-On Rise Time 9.9 20 t V = -15V, I = -1A, V = -10V, r DD D GS ns Turn-Off Delay Time 108.0 216 R = 6 t GEN D(off) Turn-Off Fall Time t 76.5 153 f Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to product testing. 30 30 V = -5V DS Pulsed 25 25 20 20 15 15 10 10 5 5 0 0 0 0.5 1.0 1.5 2.0 0.5 1 1.5 2 2.5 -V , DRAIN-SOURCE VOLTAGE (V) -V , GATE SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristics 2 of 5 June 2010 DMP2022LSS Diodes Incorporated www.diodes.com Document number: DS31373 Rev. 5 - 2 -I , DRAIN CURRENT (A) D -I , DRAIN CURRENT (A) D