DMP2130L P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low R : Case: SOT23 DS(ON) 75 m V = -4.5V Case Material - Molded Plastic, Green Molding Compound. GS 110 m V = -2.7V UL Flammability Rating 94V-0 GS 125 m V = -2.5V Moisture Sensitivity: Level 1 per J-STD-020 GS Low Input/Output Leakage Terminals: Finish - Matte Tin annealed over Copper leadframe. e3 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Solderable per MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Terminal Connections: See Diagram Below Qualified to AEC-Q101 Standards for High Reliability Weight: 0.008 grams (approximate) Drain SOT23 D Gate G S Source Top View Internal Schematic Top View Ordering Information (Note 4) Part Number Case Packaging DMP2130L-7 SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2130L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS Drain Current (Note 5) Continuous T = +25C -3.0 A A I D -2.4 T = +70C A Pulsed Drain Current (Note 6) I -15 A DM Body-Diode Continuous Current (Note 5) I 2.0 A S Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.4 W P D Thermal Resistance, Junction to Ambient (Note 5) Steady-State 90 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMin Typ Max Unit Test Condition STATIC PARAMETERS Drain-Source Breakdown Voltage BV -20 V I = -250A, V = 0V DSS D GS Zero Gate Voltage Drain Current T = 25 C I -1 A V = -20V, V = 0V J DSS DS GS Gate-Body Leakage Current I 100 nA V = 0V, V = 12V GSS DS GS Gate Threshold Voltage -0.6 -1.25 V V V = V , I = -250A GS(th) DS GS D On State Drain Current (Note 7) -15 A I V = -4.5V, V = -5V D (ON) GS DS 51 75 V = -4.5V, I = -3.5A GS D Static Drain-Source On-Resistance (Note 7) 87 110 R m V = -2.7V, I = -3.0A DS(ON) GS D 99 125 V = -2.5V, I = -2.6A GS D Forward Transconductance (Note 7) 7.3 S g V = -10V, I = -3.0A FS DS D Diode Forward Voltage (Note 7) 0.79 -1.26 V V I = -1.7A, V = 0V SD S GS Maximum Body-Diode Continuous Current (Note 5) 1.7 A I S DYNAMIC PARAMETERS (Note 8) Total Gate Charge 7.3 nC Q V = -4.5V, V = -10V, I = -3.0A g GS DS D Gate-Source Charge Q 2.0 nC V = -4.5V, V = -10V, I = -3.0A gs GS DS D Gate-Drain Charge Q 1.9 nC V = -4.5V, V = -10V, I = -3.0A gd GS DS D Turn-On Delay Time t 12 ns D(on) Turn-On Rise Time t 20 ns r V = -10V, V = -4.5V, DS GS R = 10 , R = 6 Turn-Off Delay Time t 38 ns L G D(off) Turn-Off Fall Time t 41 ns f Input Capacitance 443 pF C iss V = -16V, V = 0V DS GS Output Capacitance 128 pF C oss f = 1.0MHz Reverse Transfer Capacitance 101 pF C rss Notes: 5. Device mounted on 1 x1 , FR-4 PC board with 2 oz. Copper and test pulse width t 10s. 6. Repetitive Rating, pulse width limited by junction temperature. 7. Test pulse width t = 300s. 8. Guaranteed by design. Not subject to production testing. 2 of 5 October 2013 DMP2130L Diodes Incorporated www.diodes.com Document number: DS31346 Rev. 5 - 2