NOT RECOMMENDED FOR NEW DESIGN USE DMP2165UW DMP2160UW P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT323 100m V = -4.5V Case Material: Molded Plastic, Green Molding Compound. GS 120m V = -2.5V UL Flammability Classification Rating 94V-0 GS 160m V = -1.8V Moisture Sensitivity: Level 1 per J-STD-020D GS Very Low Gate Threshold Voltage V 1V Terminals Connections: See Diagram Below GS(TH) Low Input Capacitance Terminals: Finish - Matte Tin Annealed over Alloy 42 e3 Fast Switching Speed Leadframe. Solderable per MIL-STD-202, Method 208 Low Input/Output Leakage Weight: 0.006 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMP2160UWQ) D ra in SOT323 D G a te G S S o u rc e Top View Internal Schematic Top View Ordering Information (Note 4) Part Number Compliance Case Packaging DMP2160UW-7 Standard SOT323 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN USE DMP2165UW DMP2160UW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -20 V V DSS Gate-Source Voltage V 12 V GSS T = +25C -1.5 A Drain Current (Note 5) I A D -1.2 T = +70C A Pulsed Drain Current -10 A IDM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 350 mW P D Thermal Resistance, Junction to Ambient 360 C/W R JA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage -20 V BV V = 0V, I = -250A DSS GS D -1.0 A Zero Gate Voltage Drain Current T = +25C I V = -20V, V = 0V J DSS DS GS 100 V = 8V, V = 0V GS DS Gate-Source Leakage nA I GSS 800 V = 12V, V = 0V GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V -0.4 -0.6 -0.9 V V = V , I = -250A GS(TH) DS GS D V = -4.5V, I = -1.5A GS D 75 100 Static Drain-Source On-Resistance 90 120 m RDS(ON) VGS = -2.5V, ID = -1.2A 120 160 V = -1.8V, I = -1A GS D Forward Transconductance 4 S g V = -10V, I = -1.5A FS DS D Diode Forward Voltage (Note 6) -1.0 V V V = 0V, I = -1.0A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance C 627 pF iss V = -10V, V = 0V DS GS Output Capacitance C 64 pF oss f = 1.0MHz Reverse Transfer Capacitance C 53 pF rss 2 Notes: 5. Device mounted on 1inch FR-4 PCB with 2 oz. Copper. t 10 sec. 6. Short duration pulse test used to minimize self-heating effect. 2 of 6 DMP2160UW March 2018 Diodes Incorporated www.diodes.com Document number: DS31521 Rev. 6 - 3