DMP3056L 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D MAX BV R DSS DS(ON) MAX Low Gate Threshold Voltage TA = +25C Low Input Capacitance 50m V =-10V -4.3A GS Fast Switching Speed -30V -3.7A 70m VGS =-4.5V Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified Description and Applications facilities), please contact us or your local Diodes This new generation MOSFET has been designed to minimize the representative. on-state resistance (RDS(ON)) yet maintain superior switching DMP3056L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 25 V GSS T = +25C -4.3 Steady A A Drain Current (Note 5) VGS = -10V ID State -3.4 TA = +70C Pulsed Drain Current (Note 6) IDM -20 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.38 W PD Thermal Resistance, Junction to Ambient (Note 5) 91 C/W RJA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -30V, V = 0V DSS DS GS 100 V = 20V, V = 0V GS DS Gate-Source Leakage nA IGSS 800 VGS = 25V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -1 -2.1 V VGS(TH) VDS = VGS, ID = -250A 35 50 VGS = -10V, ID = -6.0A Static Drain-Source On-Resistance m RDS(ON) 50 70 V = -4.5V, I = -5.0A GS D Diode Forward Voltage V -1.2 V V = 0V, I = -1.7A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 642 pF iss Output Capacitance C 65 pF V = -25V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance C 48 pF rss Gate Resistance 15 RG VDS = 0V, VGS = 0V, f = 1.0MHz 5.8 nC Total Gate Charge (VGS = -4.5V) QG VDS = -15V, ID = -6A 11.8 Total Gate Charge (VGS = -10V) QG Gate-Source Charge 2.0 nC QGS VDS = -15V, ID = -6A Gate-Drain Charge QGD 2.4 Turn-On Delay Time t 4.9 D(ON) Rise Time t 4.7 R VDS = -15V, VGS = -10V, ns I = -1A, R = 6.0 Turn-Off Delay Time t 35.2 D G D(OFF) Fall Time t 18.2 F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 6. Pulse width 10S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 June 2021 DMP3056L Diodes Incorporated www.diodes.com Document number: DS37386 Rev. 6 - 2