DMT8012LPS-13 Diodes Incorporated

DMT8012LPS-13 electronic component of Diodes Incorporated
DMT8012LPS-13 Diodes Incorporated
DMT8012LPS-13 MOSFETs
DMT8012LPS-13  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DMT8012LPS-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMT8012LPS-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. DMT8012LPS-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET N-Ch Enh Mode FET 80V 20Vgss 80A
Datasheet: DMT8012LPS-13 Datasheet (PDF)
Price (USD)
1: USD 1.0286 ea
Line Total: USD 1.03 
Availability : 2289
  
Ship by Thu. 11 Sep to Tue. 16 Sep
QtyUnit Price
1$ 1.0286
10$ 0.8186
30$ 0.5351
100$ 0.4126
500$ 0.3715
1000$ 0.3491

Availability 2289
Ship by Thu. 11 Sep to Tue. 16 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0286
10$ 0.8186
30$ 0.5351
100$ 0.4126
500$ 0.3715
1000$ 0.3491


Availability 1117
Ship by Tue. 02 Sep to Thu. 04 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.0125
10$ 1.212
100$ 0.737
500$ 0.5819
1000$ 0.5247
2500$ 0.462

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMT8012LPS-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMT8012LPS-13 and other electronic components in the MOSFETs category and beyond.

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DMT8012LPS Green 80V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features High Conversion Efficiency I D Low R Minimizes On State Losses DS(ON) BV R DSS DS(ON) T = +25C C Low Input Capacitance 17m @ V = 10V 65A GS 80V Fast Switching Speed 21m @ V = 4.5V 59A GS <1.1mm Package Profile Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Des cription and Applications This MOSFET is designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high-efficiency power management applications. Case: POWERDI5060-8 Case Material: Molded Plastic, Green Molding Compound; Synchronous Rectifier UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Finish - Matte Tin Annealed over Copper Leadframe; DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) POWERDI5060-8 S D Pin1 S D S D D G Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMT8012LPS-13 POWERDI5060-8 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMT8012LPS Maximum Ratings (@T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 80 V DSS Gate-Source Voltage V 20 V GSS T = +25C 9 A Continuous Drain Current, V = 10V (Note 5) I A GS D 7.2 T = +70C A T = +25C 65 C A Continuous Drain Current, V = 10V (Note 6) I GS D 51 T = +70C C Maximum Continuous Body Diode Forward Current (Note 6) I 80 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 A DM Avalanche Current, L=0.1mH I 11.6 A AS Avalanche Energy, L=0.1mH E 10.2 mJ AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) T = +25C P 2.1 W A D Thermal Resistance, Junction to Ambient (Note 5) R 56 C/W JA Total Power Dissipation (Note 6) T = +25C P 113 W C D Thermal Resistance, Junction to Case (Note 6) R 1.1 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics (@T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 80 - - V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current - - 1 A I V = 64V, V = 0V DSS DS GS Gate-Source Leakage I - - 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 1.3 3 V V = V , I = 250A GS(TH) DS GS D - 14 17 V = 10V, I = 12A GS D Static Drain-Source On-Resistance R m DS(ON) - 16.5 21 V = 4.5V, I = 6A GS D Diode Forward Voltage V - 0.9 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C - 1,949 - iss V = 40V, V = 0V, DS GS Output Capacitance C - 177 - pF oss f = 1MHz Reverse Transfer Capacitance C - 10 - rss Gate Resistance - 0.7 - R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q - 15 - GS g Total Gate Charge (V = 10V) Q - 34 - GS g nC V = 40V, I = 12A DS D Gate-Source Charge Q - 6 - gs Gate-Drain Charge Q - 4.5 - gd Turn-On Delay Time - - t 4.9 D(ON) Turn-On Rise Time - - t 3.8 V = 40V, V = 10V, R DD GS ns Turn-Off Delay Time - 16.5 - t I = 12A, R = 1.6 D(OFF) D G Turn-Off Fall Time - 3.5 - t F Body Diode Reverse Recovery Time - 30.2 - ns t RR I = 12A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Qrr - 34.6 - nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 7 DMT8012LPS July 2015 Diodes Incorporated www.diodes.com Document number: DS37738 Rev. 3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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