DPLS350Y-13 Diodes Incorporated

DPLS350Y-13 electronic component of Diodes Incorporated
DPLS350Y-13 Diodes Incorporated
DPLS350Y-13 Bipolar Transistors - BJT
DPLS350Y-13  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DPLS350Y-13 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DPLS350Y-13 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. DPLS350Y-13
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 1000mW -50Vceo
Datasheet: DPLS350Y-13 Datasheet (PDF)
Price (USD)
2500: USD 0.1296 ea
Line Total: USD 324 
Availability : 55775
  
Ship by Wed. 19 Nov to Tue. 25 Nov
QtyUnit Price
2500$ 0.1296
5000$ 0.1121
7500$ 0.1085
10000$ 0.1055
12500$ 0.0903

Availability 55775
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.1296
5000$ 0.1121
7500$ 0.1085
10000$ 0.1055
12500$ 0.0903


Availability 2696
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.18
50$ 0.1624
150$ 0.1154
500$ 0.0995
2500$ 0.096
5000$ 0.0942

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DPLS350Y-13 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DPLS350Y-13 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data BV > -50V CEO Case: SOT89 I = -3A High Continuous Collector Current C Case Material: Molded Plastic, Green Molding Compound I up to -5A Peak Pulse Current CM UL Flammability Rating 94V-0 2W Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Voltage V < -180mV 1A CE(sat) Terminals: Finish - Matte Tin Plated Leads, Solderable per R = 67m 2A for a Low Equivalent On-Resistance CE(sat) MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.052 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT89 C E C B C B E Top View Device Symbol Top View Pin-Out Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DPLS350Y-13 P35 13 12 2,500 DPLS350Y-13R P35 13 12 4,000 DPLS350YTC P35 13 12 4,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DPLS350Y Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -50 V CEO Emitter-Base Voltage V -6 V EBO Continuous Collector Current -3 A I C Peak Pulse Current -5 A I CM Base Current -500 mA I B Thermal Characteristics Characteristic Symbol Value Unit (Note 5) 1 Power Dissipation (Note 6) 1.6 W P D (Note 7) 2.0 (Note 5) 125 Thermal Resistance, Junction to Ambient Air (Note 6) 78 C/W R JA (Note 7) 62.5 Thermal Resistance, Junction to Lead (Note 8) R 5.7 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except the device is mounted on 25mm x 25mm 1oz copper. 7. Same as note (5), except the device is mounted on 50mm x 50mm 1oz copper. 8. Thermal resistance from junction to solder-point (on the exposed collector pad). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 8 DPLS350Y November 2015 Diodes Incorporated www.diodes.com Document number: DS31149 Rev. 9 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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