MMST5551-7-F Diodes Incorporated

MMST5551-7-F electronic component of Diodes Incorporated
MMST5551-7-F Diodes Incorporated
MMST5551-7-F Bipolar Transistors - BJT
MMST5551-7-F  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMST5551-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMST5551-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMST5551-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 160 V 200 mA 300MHz 200 mW Surface Mount SOT-323
Datasheet: MMST5551-7-F Datasheet (PDF)
Price (USD)
6000: USD 0.0765 ea
Line Total: USD 459 
Availability : 64020
  
Ship by Tue. 09 Sep to Mon. 15 Sep
QtyUnit Price
6000$ 0.0765
6000$ 0.0477
9000$ 0.035
15000$ 0.032

Availability 3119
Ship by Fri. 05 Sep to Tue. 09 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3175
10$ 0.195
100$ 0.1176
500$ 0.0803
1000$ 0.0693
3000$ 0.0605
6000$ 0.0539
9000$ 0.0473
24000$ 0.0462


Availability 1299
Ship by Fri. 05 Sep to Tue. 09 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.336
10$ 0.245
100$ 0.1414
351$ 0.0546
966$ 0.0518


Availability 1561
Ship by Tue. 16 Sep to Fri. 19 Sep
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.1134
100$ 0.0908
300$ 0.0595
3000$ 0.0479
6000$ 0.0433
9000$ 0.041


Availability 64020
Ship by Tue. 09 Sep to Mon. 15 Sep
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.0765
6000$ 0.0477
9000$ 0.035
15000$ 0.032

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMST5551-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMST5551-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MMST5551-7-F from Diodes Incorporated is a Bipolar (BJT) Transistor NPN with a rated voltage of 160 V, a rated current of 200 mA, and cut-off frequency of 300 MHz. It is a surface-mount device packaged in the SOT-323 format and dissipates up to 200 mW of power. It is suitable for use in switching and low-level amplifier applications in general-purpose electronic systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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