Gate Threshold Voltage VGS(TH) N-CHANNEL ENHANCEMENT ZVN2110A ZVN2110A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 TYPICAL CHARACTERISTICS FEATURES * 100 Volt V VGS= DS VGS= 10V 2.0 2.0 10V *R = 4 9V DS(on) 9V 8V 7V 1.6 1.6 8V 6V D 7V G 1.2 1.2 S 5V 6V E-Line 0.8 0.8 TO92 Compatible 5V 4V ABSOLUTE MAXIMUM RATINGS. 4V 0.4 0.4 PARAMETER SYMBOL VALUE UNIT 3V 3V 0 0 Drain-Source Voltage V 100 V DS 2 46 8 10 0 20 40 60 80 100 Continuous Drain Current at T =25C I 320 mA amb D VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Pulsed Drain Current I 6A DM Output Characteristics Saturation Characteristics Gate Source Voltage V 20 V GS Power Dissipation at T =25C P 700 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C 10 2.8 j stg 2.4 8 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb VDS=25V 2.0 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. 6 VDS=10V 1.6 Drain-Source Breakdown BV 100 V I =1mA, V =0V DSS D GS 1.2 Voltage 4 ID= 0.8 1A Gate-Source Threshold V 0.8 2.4 V ID=1mA, V = V GS(th) DS GS 2 Voltage 0.4 500mA Gate-Body Leakage I 20 nA V = 20V, V =0V 100mA 0 GSS GS DS 0 0 2 4 68 10 0 2 46 8 10 Zero Gate Voltage Drain I 1 A V =100V, V =0 DSS DS GS Current 100 V =80V, V =0V, T=125C(2) A DS GS VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) On-State Drain Current(1) I 1.5 A V =25V, V =10V D(on) DS GS Transfer Characteristics Voltage Saturation Characteristics Static Drain-Source On-State R 4 V =10V,I =1A DS(on) GS D Resistance (1) Forward Transconductance g 250 mS V =25V,I =1A 10 2.4 fs DS D (1)(2) 2.2 2.0 Input Capacitance (2) C 75 pF iss 1.8 VGS=10V 5 Common Source Output C 25 pF V =25 V, V =0V, f=1MHz ID=1 A oss DS GS 1.6 ID= Capacitance (2) 1A 1.4 500mA VGS=VDS Reverse Transfer C 8 pF 100mA 1.2 rss ID=1mA Capacitance (2) 1.0 0.8 Turn-On Delay Time (2)(3) t 7 ns d(on) 0.6 Rise Time (2)(3) t 8 ns 1 r V 25V, I =1A 1 10 100 DD D -40 -20 0 20 40 60 80 100 120 140 160 180 Turn-Off Delay Time (2)(3) t 13 ns d(off) VGS-Gate Source Voltage (Volts) Fall Time (2)(3) t 13 ns Tj-Junction Temperature (C) f On-resistance v gate-source voltage (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% Normalised RDS(on) and VGS(th) v Temperature (2) Sample test (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3-365 Drain-Source Resistance RDS(on) DS- Voltage (Volts) V Drain Source RDS(on)-Drain Source Resistance () ID(on) -On-State Drain Current (Amps) Normalised RDS(on) and VGS(th) ID(on) -On-State Drain Current (Amps) I -On-State Drain Current (Amps) D(on) ID(on) -On-State Drain Current (Amps) Normalised RDS(on) and VGS(th) ID(on) -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) Gate Threshold Voltage VGS(TH) N-CHANNEL ENHANCEMENT ZVN2110A ZVN2110A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 TYPICAL CHARACTERISTICS FEATURES * 100 Volt V VGS= DS VGS= 10V 2.0 2.0 10V *R = 4 9V DS(on) 9V 8V 7V 1.6 1.6 8V 6V D 7V G 1.2 1.2 S 5V 6V E-Line 0.8 0.8 TO92 Compatible 5V 4V ABSOLUTE MAXIMUM RATINGS. 4V 0.4 0.4 PARAMETER SYMBOL VALUE UNIT 3V 3V 0 0 Drain-Source Voltage V 100 V DS 2 468 10 020 40 60 80 100 Continuous Drain Current at T =25C I 320 mA amb D VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Pulsed Drain Current I 6A DM Output Characteristics Saturation Characteristics Gate Source Voltage V 20 V GS Power Dissipation at T =25C P 700 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C 10 2.8 j stg 2.4 8 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb VDS=25V 2.0 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. 6 VDS=10V 1.6 Drain-Source Breakdown BV 100 V I =1mA, V =0V DSS D GS 1.2 Voltage 4 ID= 0.8 1A Gate-Source Threshold V 0.8 2.4 V ID=1mA, V = V GS(th) DS GS 2 Voltage 0.4 500mA Gate-Body Leakage I 20 nA V = 20V, V =0V 100mA 0 GSS GS DS 0 0 2 4 6810 0 2 468 10 Zero Gate Voltage Drain I 1 A V =100V, V =0 DSS DS GS Current 100 V =80V, V =0V, T=125C(2) A DS GS VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) On-State Drain Current(1) I 1.5 A V =25V, V =10V D(on) DS GS Transfer Characteristics Voltage Saturation Characteristics Static Drain-Source On-State R 4 V =10V,I =1A DS(on) GS D Resistance (1) Forward Transconductance g 250 mS V =25V,I =1A 10 2.4 fs DS D (1)(2) 2.2 2.0 Input Capacitance (2) C 75 pF iss 1.8 VGS=10V 5 Common Source Output C 25 pF V =25 V, V =0V, f=1MHz ID=1 A oss DS GS 1.6 ID= Capacitance (2) 1A 1.4 500mA VGS=VDS Reverse Transfer C 8pF 100mA 1.2 rss ID=1mA Capacitance (2) 1.0 0.8 Turn-On Delay Time (2)(3) t 7ns d(on) 0.6 Rise Time (2)(3) t 8ns 1 r V 25V, I =1A 1 10 100 DD D -40 -20 0 20 40 60 80 100 120 140 160 180 Turn-Off Delay Time (2)(3) t 13 ns d(off) VGS-Gate Source Voltage (Volts) Fall Time (2)(3) t 13 ns Tj-Junction Temperature (C) f On-resistance v gate-source voltage (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% Normalised RDS(on) and VGS(th) v Temperature (2) Sample test. ( 3-365 3-364 3 ) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Drain-Source Resistance RDS(on) DS- Voltage (Volts) V Drain Source RDS(on)-Drain Source Resistance ()