ZVN4306AV Diodes Incorporated

ZVN4306AV electronic component of Diodes Incorporated
ZVN4306AV Diodes Incorporated
ZVN4306AV MOSFETs
ZVN4306AV  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ZVN4306AV MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZVN4306AV MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.ZVN4306AV
Manufacturer:Diodes Incorporated
Category:MOSFETs
Description:N-Channel 60 V 1.1A (Ta) 850mW (Ta) Through Hole TO-92
Datasheet:ZVN4306AV Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 3.2625 ea
Line Total: USD 3.26 
Availability : 4196
  
Ship by Fri. 19 Jun to Tue. 23 Jun
QtyUnit Price
1$ 3.2625
10$ 2.016
100$ 1.265
500$ 1.0087
1000$ 0.9284
2000$ 0.8767
  

Availability4196
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.2625
10$ 2.016
100$ 1.265
500$ 1.0087
1000$ 0.9284
2000$ 0.8767

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZVN4306AV from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZVN4306AV and other electronic components in the MOSFETs category and beyond.

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N-CHANNEL ENHANCEMENT ZVN4306AV MODE VERTICAL DMOS FET ISSUE 1 FEBRUARY 95 FEATURES * 60 Volt V DS *R = 0.33 DS(on) * Repetitive Avalanche Rating D APPLICATIONS G S * Solenoids / relay drivers for automotive * Stepper Motor Drivers E-Line * DC-DC convertors TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V 60 V DS Continuous Drain Current at T =25C I 1.1 A amb D Practical Continuous Drain Current at I 1.3 A DP T =25C amb Pulsed Drain Current I 15 A DM Gate Source Voltage V 20 V GS Power Dissipation at T =25C P 850 mW amb tot Practical Power Dissipation at T =25C* P 1.13 W amb totp Avalanche Current-Repetitive I 1A AR Avalanche Energy-Repetitive E 25 mJ AR Operating and Storage Temperature Range T :T -55 to +150 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimumZVN4306AV ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source BV 60 V I =1mA, V =0V DSS D GS Breakdown Voltage Gate-Source V 1.3 3 V I =1mA, V =V GS(th) D DS GS Threshold Voltage Gate-Body Leakage I 100 nA V = 20V, V =0V GSS GS DS Zero Gate Voltage I 10 A V =60V, V =0 DSS DS GS Drain Current 100 A V =48V, V =0V, T=125C(2) DS GS On-State Drain I 12 A V =10V, V =10V D(on) DS GS Current(1) Static Drain-Source R 0.22 0.33 V =10V,I =3A DS(on) GS D On-State Resistance 0.32 0.45 V =5V, I =1.5A GS D (1) Forward g 700 mS V =25V,I =3A fs DS D Transconductance (1)(2) Input Capacitance (2) C 350 pF iss Common Source C 140 pF V =25 V, V =0V, f=1MHz oss DS GS Output Capacitance (2) Reverse Transfer C 30 pF rss Capacitance (2) Turn-On Delay Time t 8ns d(on) (2)(3) V 25V, V =10V, I =3A DD GEN D Rise Time (2)(3) t 25 ns r Turn-Off Delay Time t 30 ns d(off) (2)(3) Fall Time (2)(3) t 16 ns f (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
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Pericom/Diodes
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