Product Information

ZVN4306AV

ZVN4306AV electronic component of Diodes Incorporated

Datasheet
N-Channel 60 V 1.1A (Ta) 850mW (Ta) Through Hole TO-92
Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.7622 ea
Line Total: USD 3048.8

161 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 4000  Multiples: 4000
Pack Size: 4000

 More Buying Options & Price Grid(s)

Availability Price Quantity
161 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 4000
Multiples : 4000

Stock Image

ZVN4306AV
Diodes Incorporated

4000 : USD 0.7622
8000 : USD 0.7622
12000 : USD 0.7622

2910 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 4000
Multiples : 3000

Stock Image

ZVN4306AV
Diodes Incorporated

4000 : USD 0.831

5412 - WHS 3


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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ZVN4306AV
Diodes Incorporated

1 : USD 1.84
10 : USD 1.5065
100 : USD 1.173
500 : USD 0.9902
1000 : USD 0.8073
2000 : USD 0.7866

161 - WHS 4


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 166
Multiples : 166

Stock Image

ZVN4306AV
Diodes Incorporated

166 : USD 0.7622

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

N-CHANNEL ENHANCEMENT ZVN4306AV MODE VERTICAL DMOS FET ISSUE 1 FEBRUARY 95 FEATURES * 60 Volt V DS *R = 0.33 DS(on) * Repetitive Avalanche Rating D APPLICATIONS G S * Solenoids / relay drivers for automotive * Stepper Motor Drivers E-Line * DC-DC convertors TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V 60 V DS Continuous Drain Current at T =25C I 1.1 A amb D Practical Continuous Drain Current at I 1.3 A DP T =25C amb Pulsed Drain Current I 15 A DM Gate Source Voltage V 20 V GS Power Dissipation at T =25C P 850 mW amb tot Practical Power Dissipation at T =25C* P 1.13 W amb totp Avalanche Current-Repetitive I 1A AR Avalanche Energy-Repetitive E 25 mJ AR Operating and Storage Temperature Range T :T -55 to +150 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimumZVN4306AV ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source BV 60 V I =1mA, V =0V DSS D GS Breakdown Voltage Gate-Source V 1.3 3 V I =1mA, V =V GS(th) D DS GS Threshold Voltage Gate-Body Leakage I 100 nA V = 20V, V =0V GSS GS DS Zero Gate Voltage I 10 A V =60V, V =0 DSS DS GS Drain Current 100 A V =48V, V =0V, T=125C(2) DS GS On-State Drain I 12 A V =10V, V =10V D(on) DS GS Current(1) Static Drain-Source R 0.22 0.33 V =10V,I =3A DS(on) GS D On-State Resistance 0.32 0.45 V =5V, I =1.5A GS D (1) Forward g 700 mS V =25V,I =3A fs DS D Transconductance (1)(2) Input Capacitance (2) C 350 pF iss Common Source C 140 pF V =25 V, V =0V, f=1MHz oss DS GS Output Capacitance (2) Reverse Transfer C 30 pF rss Capacitance (2) Turn-On Delay Time t 8ns d(on) (2)(3) V 25V, V =10V, I =3A DD GEN D Rise Time (2)(3) t 25 ns r Turn-Off Delay Time t 30 ns d(off) (2)(3) Fall Time (2)(3) t 16 ns f (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Diodes Incorporated may also be referenced as

DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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