X-On Electronics has gained recognition as a prominent supplier of ZXMC3F31DN8TA MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMC3F31DN8TA MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
We are delighted to provide the ZXMC3F31DN8TA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMC3F31DN8TA and other electronic components in the MOSFETs category and beyond.
ZXMC3F31DN8 30V SO8 Complementary dual enhancement mode MOSFET Summary V Q (BR)DSS G Device R ( ) I (A) DS(on) D (V) (nC) 0.024 V = 10V 7.3 GS Q1 30 12.9 0.039 V = 4.5V 5.7 GS 0.045 V = -10V 5.3 GS Q2 -30 12.7 0.080 V = -4.5V 4 GS Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (R ) and yet maintain superior DS(on) switching performance making it ideal for power management and battery charging functions. Features Low on-resistance 4.5V gate drive capability D1 D2 Low profile SOIC package Applications G1 G2 DC-DC Converters S1 S2 SMPS Load switching switches Q1 N-Channel Q2 P-Channel Motor control Backlighting Ordering information Device Reel size Tape width Quantity (inches) (mm) per reel S1 D1 N ZXMC3F31DN8TA 7 12 500 D1 G1 S2 D2 Device marking P ZXMC G2 D2 3F31 Top view Issue 1 - September 2008 1 www.zetex.com Diodes Incorporated 2008 www.diodes.com ZXMC3F31DN8 Absolute maximum ratings Parameter Symbol N- P- Unit channel channel Q1 Q2 V DSS Drain-Source voltage 30 -30 V V Gate-Source voltage GS V 20 20 (b)(d) 7.3 5.3 A I D Continuous Drain current V = 10V T =25 C GS A (b)(d) 5.9 4.3 V = 10V T =70 C GS A (a)(d) 5.7 4.1 V = 10V T =25 C GS A (a)(e) 6.8 4.9 V = 10V T =25 C GS A (f)(d) 7.8 5.7 V = 10V T =25 C GS L (c) I DM 33 23 A Pulsed Drain current (b)(d) 3.5 3.2 A Continuous Source current (Body diode) I S (c)(d) 33 23 A Pulsed Source current (Body diode) I SM (a)(d) 1.25 W Power dissipation at T =25 C P A D 10 mW/ C Linear derating factor (a)(e) 1.8 W Power dissipation at T =25 C A P D Linear derating factor 14 mW/ C (b)(d) 2.1 W Power dissipation at T =25 C P A D 17 Linear derating factor mW/ C (f) (d) 2.35 W Power dissipation at T =25 C P L D 19 mW/ C Linear derating factor T , T Operating and storage temperature range j stg -55 to 150 C Thermal resistance Parameter Symbol Value Unit (a)(d) R 100 C/W Junction to ambient JA (a)(e) R 70 C/W Junction to ambient JA (b)(d) R 60 Junction to ambient C/W JA (f) (d) R 53 C/W Junction to lead JL NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) Mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us pulse width limited by maximum junction temperature. (d) For a device with one active die. (e) For a device with two active die running at equal power. (f) Thermal resistance from junction to solder-point (at the end of the drain lead). Issue 1 - September 2008 2 www.zetex.com Diodes Incorporated 2008 www.diodes.com
Xon Electronic has distinguished itself as a premier provider of the 1-480435-0 housing receptacle, part of the FASTON .187 series, manufactured by TE Connectivity. This article explores why Xon Electron
