ZXMN3F30FHTA Diodes Incorporated

ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V R ( ) I (A) (BR)DSS DS(on) D 30 0.047 V = 10V 4.6 GS 0.065 V = 4.5V 4.0 GS Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with 4.5V gate drive. Features D Low on-resistance 4.5V gate drive capability SOT23 G Applications S DC-DC Converters Power management functions Motor Control Ordering information S DEVICE Reel size Tape width Quantity (inches) (mm) per reel D ZXMN3F30FHTA 7 8 3000 G Device marking KNA Top view Issue 2 - February 2008 1 www.zetex.com Zetex Semiconductors plc 2008ZXMN3F30FH Absolute maximum ratings Parameter Symbol Limit Unit Drain source voltage V 30 V DSS Gate source voltage V 20 V GS (b) I 4.6 A Continous Drain Current V =4.5 T =25 C D GS A (b) 3.7 A V =4.5 T =70 C GS A (a) 3.8 A V =4.5 T =25 C GS A (c) I 21 A Pulsed drain current DM (b) I 2.2 A Continuous source current (body diode) S (c) I 21 A Pulsed source current (body diode) SM (a) P 0.95 W Power dissipation at T =25 C D A 7.6 mW/C Linear derating factor (b) P 1.4 W Power dissipation at T =25 C D A 11.2 mW/C Linear derating factor Operating and storage temperature range T , T -55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 131 C/W Junction to ambient JA (b) R 89 C/W Junction to ambient JA (d) R 68 C/W Junction to lead JL NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. (d) Thermal resistance from junction to solder-point (at the end of the drain lead). Issue 2 - February 2008 2 www.zetex.com Zetex Semiconductors plc 2008