A Product Line of Diodes Incorporated Green ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Fast Switching Speed D V R (BR)DSS DS(on) Low Gate Drive T = +25C A Low Input Capacitance Lead-Free Finish RoHS Compliant (Notes 1 & 2) 120m V = 10V 4.4A GS Halogen and Antimony Free. Green Device (Note 3) 60V 180m V = 4.5V 3.5A Qualified to AEC-Q101 Standards for High Reliability GS Mechanical Data Description and Applications Case: SOT223 This MOSFET is designed to minimize the on-state resistance Case Material: Molded Plastic, Green Molding Compound and yet maintain superior switching performance, making it ideal for UL Flammability Classification Rating 94V-0 high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below DC-DC Converters Terminals: Finish - Matte Tin Annealed over Copper Leadframe Power Management Functions Solderable per MIL-STD-202, Method 208 Disconnect Switches Weight: 0.112 grams (Approximate) Motor Control Uninterrupted Power Supply D SOT223 G S Top View Pin Out - Top Equivalent Circuit View Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN6A11GTA See below 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated ZXMN6A11G Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 DSS V Gate-Source Voltage 20 VGS (Note 6) 4.4 Continuous Drain Current V = 10V T = +70C (Note 6) I 3.5 GS A D 3.1 (Note 5) A Pulsed Drain Current V = 10V (Note 7) I 15.6 GS DM Continuous Source Current (Body Diode) (Note 6) I 5 S Pulsed Source Current (Body Diode) (Note 7) I 15.6 SM Thermal Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit 2.0 (Note 5) 16 Power Dissipation W P D Linear Derating Factor 3.9 mW/C (Note 6) 31 (Note 5) 62.5 Thermal Resistance, Junction to Ambient R JA (Note 6) 32.0 C/W Thermal Resistance, Junction to Lead (Note 8) R 9.8 JL Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Same as Note 5, except the device is measured at t 10 seconds. 7. Same as Note 5, except the device is pulsed with D = 0.02 and pulse width 300s. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 ZXMN6A11G March 2015 Diodes Incorporated www.diodes.com Document number: DS33556 Rev. 6 - 2