ZXMP10A16KTC Diodes Incorporated

ZXMP10A16KTC electronic component of Diodes Incorporated
ZXMP10A16KTC Diodes Incorporated
ZXMP10A16KTC MOSFETs
ZXMP10A16KTC  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ZXMP10A16KTC MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMP10A16KTC MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. ZXMP10A16KTC
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: P-Channel 100 V 3A (Ta) 2.15W (Ta) Surface Mount TO-252-3
Datasheet: ZXMP10A16KTC Datasheet (PDF)
Price (USD)
1: USD 1.625 ea
Line Total: USD 1.62 
Availability : 3956
  
Ship by Fri. 29 Aug to Tue. 02 Sep
QtyUnit Price
1$ 1.625
10$ 1.044
100$ 0.6666
500$ 0.5379
1000$ 0.4895
2500$ 0.4499

Availability 3956
Ship by Fri. 29 Aug to Tue. 02 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.625
10$ 1.044
100$ 0.6666
500$ 0.5379
1000$ 0.4895
2500$ 0.4499


Availability 2425
Ship by Tue. 02 Sep to Mon. 08 Sep
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.4885
5000$ 0.4687


Availability 1808
Ship by Tue. 02 Sep to Mon. 08 Sep
MOQ : 514
Multiples : 1
QtyUnit Price
514$ 0.5066

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXMP10A16KTC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMP10A16KTC and other electronic components in the MOSFETs category and beyond.

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ZXMP10A16K 100V DPAK P-channel enhancement mode MOSFET Summary V R ( ) I (A) (BR)DSS DS(on) D 0.235 V = -10V 4.6 GS -100 0.285 V = -6V 4.2 GS Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast G switching, making it ideal for high efficiency power management applications. Features S Low on-resistance Fast switching speed Low threshold D Low gate drive DPAK package Applications DC-DC converters D Power management functions GS Pinout - top view Disconnect switches Motor control Ordering information Device Reel size Tape width Quantity (inches) (mm) per reel ZXMP10A16KTC 13 16 2500 Device marking ZXMP 10A16 Issue 1 - October 2006 1 www.zetex.com Zetex Semiconductors plc 2006ZXMP10A16K Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage V -100 V DSS Gate-source voltage V 20 V GS (b) I 4.6 A Continuous drain current V = 10V T =25C D GS amb (b) 3.7 V = 10V T =70C GS amb (a) 3 V = 10V T =25C GS amb (c) I 15.4 A Pulsed drain current DM (b) I 10.6 A Continuous source current (body diode) S (c) I 15.4 A Pulsed source current (body diode) SM (a) P 4.24 W Power dissipation at T =25C D amb Linear derating factor 34 mW/C (b) P 9.76 W Power dissipation at T =25C D amb Linear derating factor 78 mW/C (d) P 2.15 W Power dissipation at T =25C D amb Linear derating factor 16.8 mW/C Operating and storage temperature range T , T -55 to +150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 29.45 C/W Junction to ambient JA (b) R 12.8 C/W Junction to ambient JA (d) R 58.1 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. (d)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 1 - October 2006 2 www.zetex.com Zetex Semiconductors plc 2006

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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