ZXMP3A17E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Max I D Fast Switching Speed V Max R (BR)DSS DS(ON) T = +25C A Low Threshold (Note 6) Low Gate Drive -30V -4A 70m V = -10V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation of TRENCH MOSFETs from Zetex utilizes a Mechanical Data unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low Case: SOT26 voltage, power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 DC - DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. Disconnect Switches Solderable per MIL-STD-202, Method 208 e3 Motor Control Weight: 0.016 grams (Approximate) D SOT26 D 1 6 D D D 2 5 G 3 4 G S S Pin-Out (Top View) Top View Equivalent Circuit Ordering Information (Note 4) Part Number Marking Reel Size (inch) Tape Width (mm) Quantity Per Reel ZXMP3A17E6TA 317 7 8 3000 ZXMP3A17E6TC 317 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMP3A17E6 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GS T = +25C (Note 6) -4.0 A Continuous Drain Current V = -10V T = +70C (Note 6) I -3.2 A GS A D T = +25C (Note 5) -3.2 A Pulsed Drain Current (Note 7) -14.4 A I DM Continuous Source Current (Body Diode) (Note 6) -2.5 A I S Pulsed Source Current (Body Diode) (Note 7) -14.4 A I SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit W Power Dissipation at T = +25C (Note 5) 1.1 A P D Linear derating factor 8.8 mW/C W Power Dissipation at T = +25C (Note 6) 1.7 A P D Linear Derating Factor 13.6 mW/C Junction to Ambient (Note 5) 113 C/W R JA Junction to Ambient (Note 6) 73 C/W R JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR-4 PCB measured at t 5 secs. 7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage V -30 - - V I = -250A, V = 0V (BR)DSS D GS Zero Gate Voltage Drain Current - - -0.5 A I V = -30V, V = 0V DSS DS GS Gate-Body Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS Gate-Source Threshold Voltage -1.0 - - V V I = -250A, V = V GS(TH) D DS GS 0.070 V = -10V, I =-3.2A GS D Static Drain-Source On-State Resistance (Note 8) R - - DS(ON) 0.110 V = -4.5V, I =-2.5A GS D Forward Transconductance (Notes 8 &10) g - 6.4 - S V = -15V, I =-3.2A fs DS D Diode Forward Voltage (Note 8) V - -0.85 -1.2 V T = +25C , I = -2.5A, V = 0V SD J S GS DYNAMIC CHARACTERISTICS Input Capacitance (Note 10) C - 630 - pF iss V = -15V, V = 0V DS GS Output Capacitance (Note 10) C - 113 - pF oss f = 1MHz Reverse Transfer Capacitance (Note 10) C - 78 - pF rss V = -5V, V = -15V GS DS Gate Charge (Notes 9 &10) - 8.28 - nC Q g I = -3.2A D Total Gate Charge (Notes 9 &10) - 15.8 - nC Q g V = -10V, V = -15V GS DS Gate-Source Charge (Notes 9 &10) Q - 1.84 - nC gs I = -3.2A D Gate-Drain Charge (Notes 9 &10) Q - 2.8 - nC gd Turn-On Delay Time (Notes 9 &10) t - 1.74 - ns D(ON) Turn-On Rise Time (Notes 9 &10) t - 2.87 - ns R V = -15V, V = -10V DD GS Turn-Off Delay Time (Notes 9 &10) t - 29.2 - ns I = -1A, R = 6.0 D(OFF) D G Turn-Off Fall Time (Notes 9 &10) - 8.72 - ns tF Reverse Recovery Time (Note 10) - 19.5 - ns t RR T = +25C, I =-1.7A, J F Reverse Recovery Charge (Note 10) - 16.3 - nC di/dt= 100A/s Q RR Notes: 8. Measured under pulsed conditions. Width=300s. Duty cycle 2% 9. Switching characteristics are independent of operating junction temperature. 10. For design aid only, not subject to production testing. 2 of 7 ZXMP3A17E6 March 2015 Diodes Incorporated www.diodes.com Datasheet Number: DS33578 Rev. 3 - 2 NEW PRODUCT