ZXMP6A17E6Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D Fast Switching Speed V R Max (BR)DSS DS(on) TA = +25C Low Threshold (Note 7) Low Gate Drive 125m V = -10V -3.0 A GS Low Input Capacitance -60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 190m V = -4.5V -2.4 A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description PPAP Available (Note 4) This MOSFET is designed to minimize the on-state resistance and yet Mechanical Data maintain superior switching performance, making it ideal for high efficiency power management applications. Case: SOT26 Case Material: Molded Plastic, Green Molding Compound Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminals Connections: See Diagram Below Power Management Functions Terminals: Finish - Matte Tin Annealed over Copper Leadframe Disconnect Switches e3 Solderable per MIL-STD-202, Method 208 Motor Control Weight: 0.018 grams (Approximate) SOT26 D G S Equivalent Circuit Top View Pin Out - Top View Ordering Information (Notes 4 & 5) Part Number Compliance Case Quantity per reel ZXMP6A17E6QTA Automotive SOT26 3,000 Note: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMP6A17E6Q Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -60 V V DSS Gate-Source Voltage V V 20 GS (Note 7) -3.0 Continuous Drain Current -2.4 A V = 10V T = +70C (Note 7) I GS A D (Note 6) -2.3 Pulsed Drain Current V = 10V (Note 8) I -13.6 A GS DM Continuous Source Current (Body Diode) (Note 7) I -2.5 A S Pulsed Source Current (Body Diode) (Note 8) I -13.6 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.1 (Note 6) 8.8 Power Dissipation W P D Linear Derating factor 1.92 mW/C (Note 7) 15.4 (Note 6) 113 Thermal Resistance, Junction to Ambient C/W R JA (Note 7) 65 Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Same as Note 6, except the device is measured at t 5 sec. 8. Same as Note 6, except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 2 of 8 ZXMP6A17E6Q April 2015 Diodes Incorporated www.diodes.com Document Number: DS36685 Rev. 3 - 2 ADVANCE INFORMATION