ZXTN2011GTA Diodes Incorporated

ZXTN2011GTA electronic component of Diodes Incorporated
ZXTN2011GTA Diodes Incorporated
ZXTN2011GTA Bipolar Transistors - BJT
ZXTN2011GTA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ZXTN2011GTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTN2011GTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. ZXTN2011GTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 100 V 6 A 130MHz 3 W Surface Mount SOT-223-3
Datasheet: ZXTN2011GTA Datasheet (PDF)
Price (USD)
1000: USD 0.3992 ea
Line Total: USD 399.2 
Availability : 14550
  
Ship by Wed. 26 Nov to Tue. 02 Dec
QtyUnit Price
1000$ 0.3992
2000$ 0.3806
3000$ 0.3796
5000$ 0.3671
7000$ 0.3595
10000$ 0.3519
25000$ 0.3506

Availability 1545
Ship by Mon. 24 Nov to Wed. 26 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.7125
10$ 1.0296
100$ 0.627
500$ 0.4939
1000$ 0.4455


Availability 14550
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.3992
2000$ 0.3806
3000$ 0.3796
5000$ 0.3671
7000$ 0.3595
10000$ 0.3519
25000$ 0.3506


Availability 807
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9124
10$ 0.8118
30$ 0.5712
100$ 0.4802
500$ 0.4595
1000$ 0.4501

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXTN2011GTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTN2011GTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTN2011G Green 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BV > 100V Case: SOT223 CEO I = 6A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. C I = 10A Peak Pulse Current UL Flammability Rating 94V-0 CM Low Saturation Voltage V < 65mV max 1A Moisture Sensitivity: Level 1 per J-STD-020 CE(sat) R = 36m I =6A for Low Equivalent On-Resistance Terminals: Finish - Matte Tin Plated Leads. SAT c h Specified up to 10A for High Gain Hold Up Solderable per MIL-STD-202, Method 208 FE Lead-Free Finish RoHS Compliant (Notes 1 & 2) Weight: 0.112 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Line Switching Motor Driving (including DC fans) High Side Switches Subscriber Line Interface Cards (SLIC) SOT223 Pin-Out Top View Device Schematic Top View Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel ZXTN2011GTA ZXTN2011 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZXTN2011G Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 200 V VCBO Collector-Emitter Voltage 100 V V CEO Emitter-Base Voltage 7 V V EBO Continuous Collector Current 6 A I C Peak Pulse Current 10 A I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 3.0 (Note 5) Power Dissipation 24 W P D Linear Derating Factor mW/C 1.6 (Note 6) 12.8 (Note 5) 42 R JA Thermal Resistance, Junction to Ambient (Note 6) R 78 C/W JA Thermal Resistance, Junction to Lead (Note 7) 8.8 R JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTN2011G January 2016 Diodes Incorporated www.diodes.com Document number: DS33662 Rev. 3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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DIODES INC
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DIODES INC.
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DiodesIncorporated
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX
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