ZXTN23015CFHTA Diodes Incorporated

ZXTN23015CFHTA electronic component of Diodes Incorporated
ZXTN23015CFHTA Diodes Incorporated
ZXTN23015CFHTA Bipolar Transistors - BJT
ZXTN23015CFHTA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ZXTN23015CFHTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTN23015CFHTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. ZXTN23015CFHTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 15 V 6 A 235MHz 1.25 W Surface Mount SOT-23-3
Datasheet: ZXTN23015CFHTA Datasheet (PDF)
Price (USD)
1: USD 1.275 ea
Line Total: USD 1.27 
Availability : 5159
  
Ship by Wed. 03 Sep to Fri. 05 Sep
QtyUnit Price
1$ 1.275
10$ 0.7716
100$ 0.4774
500$ 0.3817
1000$ 0.352
3000$ 0.3069
6000$ 0.3003
9000$ 0.2882

Availability 5159
Ship by Wed. 03 Sep to Fri. 05 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.275
10$ 0.7716
100$ 0.4774
500$ 0.3817
1000$ 0.352
3000$ 0.3069
6000$ 0.3003
9000$ 0.2882


Availability 169
Ship by Fri. 12 Sep to Wed. 17 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.222
10$ 0.9876
30$ 0.6517
100$ 0.5083
500$ 0.46
1000$ 0.4358

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXTN23015CFHTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTN23015CFHTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTN23015CFH 15V, SOT23, NPN medium power transistor Summary V > 60V, V > 15V (BR)CEX (BR)CEO I = 6A C(CONT) R = 19m typical CE(SAT) V < 30mV 1A CE(SAT) P = 1.25W D Complementary part number : ZXTP23015CFH Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features Higher power dissipation SOT23 package High peak current Low saturation voltage 60V forward blocking voltage Applications E DC - DC converters MOSFET and IGBT gate driving C Motor drive B Relay, lamp, and solenoid drive Pinout - top view Ordering information Device Reel size Tape Quantity per REEL (inches) width ZXTN23015CFHTA 7 8mm 3000 Device marking 327 Issue 1 - February 2006 1 www.zetex.com Zetex Semiconductors plc 2006ZXTN23015CFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V 60 V CBO Collector-emitter voltage V 60 V (BR)CEX Collector-emitter voltage V 15 V CEO Emitter-base voltage V 7.0 V EBO Peak pulse current I 12 A CM (c) I 6A Continuous collector current C Base current I 1.2 A B o (a) P 0.73 W Power dissipation T =25 C D A o 5.84 (a) mW/ C Linear derating factor o (b) P 1.05 W Power dissipation T =25 C D A o 8.4 mW/ C (b) Linear derating factor o (c) P 1.25 W Power dissipation T =25 C D A o 9.6 mW/ C (c) Linear derating factor o (d) P 1.81 W Power dissipation T =25 C D A o 14.5 mW/ C (d) Linear derating factor o Operating and storage temperature T :T -55 to +150 j stg C Thermal resistance Parameter Symbol Value Unit (a) o R 171 JA Junction to ambient C/W (b) o R 119 Junction to ambient JA C/W (c) o R 100 Junction to ambient JA C/W (d) o R 69 JA Junction to ambient C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - February 2006 2 www.zetex.com Zetex Semiconductors plc 2006

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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