X-On Electronics has gained recognition as a prominent supplier of ZXTN25020DFLTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTN25020DFLTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTN25020DFLTA Diodes Incorporated

Name: ZXTN25020DFLTA
Brand: Diodes Incorporated
SKU: ZXTN25020DFLTA_Diodes_Incorporated
Availability: InStock
Rating: 5 (11 reviews)

ZXTN25020DFLTA electronic component of Diodes Incorporated

ZXTN25020DFLTA Bipolar Transistors - BJT

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See Product Specifications

Part No.	ZXTN25020DFLTA
Manufacturer:	Diodes Incorporated
Category:	Bipolar Transistors - BJT
Description:	Diodes Incorporated Bipolar Transistors - BJT NPN 20V HG Tran.
Datasheet:	ZXTN25020DFLTA Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.2375 ea
Line Total: USD 0.24

Availability - 14844
Ship by Wed. 18 Jun to Fri. 20 Jun

MOQ: 1 Multiples: 1
Pack Size: 1

ZXTN25020DFLTA More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

14844

Ship by Wed. 18 Jun to Fri. 20 Jun

MOQ : 1
Multiples : 1

1 : USD 0.2375
10 : USD 0.2087
100 : USD 0.1644
500 : USD 0.1485
1000 : USD 0.1364
3000 : USD 0.1353
24000 : USD 0.1331
45000 : USD 0.1298

Specifications

Manufacturer

Diodes Incorporated Diodes Incorporated

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

RoHS - XON

Y Y

Mounting Style

Smdsmt Smdsmt

Package / Case

SOT - 23 - 3 SOT - 23 - 3

Transistor Polarity

Npn Npn

Configuration

Single Single

Maximum DC Collector Current

2 A 2 A

Collector- Emitter Voltage VCEO Max

20 V 20 V

Collector- Base Voltage VCBO

100 V 100 V

Emitter- Base Voltage VEBO

7 V 7 V

Pd - Power Dissipation

350 mW 350 mW

Gain Bandwidth Product fT

215 Mhz 215 Mhz

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

150 C 150 C

Series

Zxtn250 Zxtn250

Packaging

Reel Reel

Dc Current Gain Hfe Max

300 @ 10 mA @ 2 v 300 @ 10 mA @ 2 v

Package Case

SOT - 23 SOT - 23

Brand

Diodes Incorporated Diodes Incorporated

Dc Collectorbase Gain Hfe Min

300 At 10 Ma At 2 V, 220 At 2 A At 2 V, 80 At 4.5 A At 2 V 300 At 10 Ma At 2 V, 220 At 2 A At 2 V, 80 At 4.5 A At 2 V

Maximum Power Dissipation

350 mW 350 mW

Factory Pack Quantity :

3000 3000

Height

1 mm 1 mm

Length

3.05 mm 3.05 mm

Cnhts

8541290000 8541290000

Dc Collector/Base Gain Hfe Min

300 At 10 Ma At 2 V, 220 At 2 A At 2 V, 80 At 4.5 A At 2 V 300 At 10 Ma At 2 V, 220 At 2 A At 2 V, 80 At 4.5 A At 2 V

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Bjts - Bipolar Transistors Bjts - Bipolar Transistors

Subcategory

Transistors Transistors

Taric

8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

ZXTN25020DFLTA Alternative Parts

We are delighted to provide the ZXTN25020DFLTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTN25020DFLTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

ZXTN25020DFL 20V, SOT23, NPN low power transistor Summary BV > 100V CEX BV > 20V CEO BV > 5V ECO I = 2A C(cont) I = 8A CM V < 70mV 1A CE(sat) R = 55m CE(sat) P = 350mW D Complementary part number ZXTP25020DFL Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. B Features High peak current E Low saturation voltage 100V forward blocking voltage Applications E MOSFET and IGBT gate driving DC-DC conversion C LED driving Interface between low voltage IC s and loads B Pinout - top view Ordering information Device Reel size Tape width Quantity per reel (inches) (mm) ZXTN25020DFLTA 7 8 3,000 Device marking 1A1 Issue 4 - January 2007 1 www.zetex.com Zetex Semiconductors plc 2007ZXTN25020DFL Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V 100 V CBO Collector-emitter voltage (forward blocking) V 100 V CEX Collector-emitter voltage V 20 V CEO Emitter-collector voltage (reverse blocking) V 5V ECO Emitter-base voltage V 7V EBO (a) I 2A Continuous collector current C Base current I 500 mA B Peak pulse current I 8A CM (a) P 350 mW Power dissipation at T =25C D amb Linear derating factor 2.8 mW/C Operating and storage temperature range T , T -55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 357 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 4 - January 2007 2 www.zetex.com Zetex Semiconductors plc 2007

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
14844 Ship by Wed. 18 Jun to Fri. 20 Jun MOQ : 1 Multiples : 1	1 : USD 0.2375 10 : USD 0.2087 100 : USD 0.1644 500 : USD 0.1485 1000 : USD 0.1364 3000 : USD 0.1353 24000 : USD 0.1331 45000 : USD 0.1298

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