N N-CHANNEL MOSFET FHU70N03A/FHD70N03A MAIN CHARACTERISTICS FEATURES ID 68 A Low gate charge VDSS 30 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ Vgs=10V 7.4m Fast switching Rdson-typ Vgs=4.5V 10.8m 100% 100% avalanche tested Qg-typ 40nC Improved dv/dt capability dv/dt RoHS RoHS product APPLICATIONS DC-DC converter and switch DC-DC mode power supplies Package Equivalent Circuit D D S S D G G TO-251 TO-252 FHU series FHD series ABSOLUTE RATINGS (Tc=25 ) Value Parameter Symbol Unit FHU70N03A FHD70N03A VDS 30 V Drain-Source Voltage IDTC=25 68 A * IDTC=100 ) 44.5 A Drain Current -continuous * 1 IDM 272 A Drain Current pulsenote 1 VGS 20 V Gate-Source Voltage 2 EAS 50 mJ Single Pulsed Avalanche Energy note 2 1 IAR 17 A Avalanche Current note 1 1 EAR 1.5 mJ Repetitive Avalanche Current note 1 3 dv/dt 5.0 V/ns Peak Diode Recovery dv/dt note 3 31.2 31.2 W PD TC=25 -Derate above 25 0.25 0.25 W/ Power Dissipation TJ TSTG -55 +150 Operating and Storage Temperature Range TL 300 Maximum Lead Temperature for Soldering Purposes * *Drain current limited by maximum junction temperature 1 Ver-1.0 ELECTRICAL CHARACTERISTICS Parameter Symbol Tests conditions Min Typ Max Units Off Characteristics BVDSS ID=250A, VGS=0V 30 - - V Drain-Source Voltage Breakdown Voltage BVDSS/ TJ ID=250A, referenced to 25 - 0.12 - V/ Temperature Coefficient - - 1 A VDS=30V,VGS=0V, TC=25 IDSS Zero Gate Voltage Drain VDS=24V, TC=125 - - 100 A Current IGSSF/R VDS=0V, VGS =20V - - 100 nA Gate-body leakage current On-Characteristics VGS(th) VDS = VGS , ID=250A 1.6 2.0 2.7 V Gate Threshold Voltage VGS =10V , ID=16A - 7.4 8.5 RDS(ON) m Static Drain-Source VGS =4.5V , ID=13A - 10.8 13 On-Resistance gfs VDS = 5V, ID=10A note 4 - 25 - S Forward Transconductance Dynamic Characteristics f=1.0MHz, Rg - 1.7 - VDS OPEN Gate Resistance Ciss - 928 - Input capacitance VDS=25V, Coss VGS =0V, - 90 - pF Output capacitance f=1.0MHz Crss - 176 - Reverse transfer capacitance Switching Characteristics td(on) - 7.2 - ns Turn-On delay time VDS=15V, tr - 12 - ns ID=16A, Turn-On rise time RG=3 td(off) - 22.8 - ns VGS =10V Turn-Off delay time note 4 5 tf - 8.1 - ns Turn-Off Fall time Qg - 14.3 - nC VDS =15V , Total Gate Charge ID=16A , Qgs - 2.6 - nC VGS =10V Gate-Source charge note 4 5 Qgd - 2.3 - nC Gate-Drain charge Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain IS - - 68 A -Source Diode Forward Current Maximum Pulsed ISM - - 272 A Drain-Source Diode Forward Current VSD VGS=0V, IS=16A - 0.9 1.3 V Drain-Source Diode Forward Voltage trr - 20.4 - ns Reverse recovery time VGS=0V, IS=16A ,dIF/dt=100A/s (note 4) Qrr - 11.9 - nC Reverse recovery charge 2 Ver-1.0