N N-CHANNEL MOSFET FHP12N60A/ FHF12N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 12A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 600V Fast switching Rdson-typ Vgs=10V 0.6 100% 100% avalanche tested Qg-typ 52nC dv/dt Improved dv/dt capability RoHS RoHS product APPLICATION High efficiency switch mode power supplies Electronic ballast LED LED power supply Package Equivalent Circuit TO-220 TO-220F FHP FHF ABSOLUTE RATINGS (Tc=25 ) Value Parameter Symbol Unit FHP12N60A FHF12N60A VDS 600 V Drain-Source Voltage IDTC=25 12* A * Drain Current -continuous * IDTC=100 ) 7* A 1 IDM 48* A Drain Current pulse note 1 VGS 30 V Gate-Source Voltage 2 EAS 929 mJ Single Pulsed Avalanche Energy note 2 1 IAR 12 A Avalanche Current note 1 1 EAR 23.1 mJ Repetitive Avalanche Current note 1 3 dv/dt 4.5 V/ns Peak Diode Recovery dv/dt note 3 PD TC=25 231 54 W Power Dissipation -Derate above 25 1.85 0.43 W/ TJ TSTG 150 55 to 150 Operating and Storage Temperature Range TL 300 Maximum Lead Temperature for Soldering Purposes * Drain current limited by maximum junction temperature 1 Ver-1.0 ELECTRICAL CHARACTERISTICS Parameter Symbol Tests conditions Min Typ Max Units Off Characteristics Drain-Source Voltage BVDSS ID=250A, VGS=0V 600 - - V Breakdown Voltage BVDSS/ TJ ID=250A, referenced to 25 - 0.7 - V/ Temperature Coefficient VDS=600V,VGS=0V, TC=25 - - 1 A IDSS Zero Gate Voltage Drain Current VDS=480V, TC=125 - - 10 A IGSSF/R VDS=0V, VGS =30V - - 100 A Gate-body leakage current On-Characteristics VGS(th) VDS = VGS , ID=250A 2.0 - 4.0 V Gate Threshold Voltage RDS(ON) VGS =10V , ID=6A - 0.6 0.75 Static Drain-Source On-Resistance Dynamic Characteristics Ciss - 1850 - Input capacitance VDS=25V, Coss VGS =0V, - 180 - pF Output capacitance f=1.0MHz Crss - 20 - Reverse transfer capacitance Switching Characteristics td(on) - 30 - ns Turn-On delay time VDS=300V, tr - 90 - ns ID=12A, Turn-On rise time RG=25 td(off) - 140 - ns note 4 5 Turn-Off delay time tf - 90 - ns Turn-Off Fall time Qg - 52 - nC Total Gate Charge VDS =480V , ID=12A , Qgs - 8.5 - nC VGS =10V Gate-Source charge note 4 5 Qgd - 20 - nC Gate-Drain charge Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source IS - - 12 A Diode Forward Current Maximum Pulsed Drain-Source Diode ISM - - 48 A Forward Current VSD VGS=0V, IS=12A - - 1.4 V Drain-Source Diode Forward Voltage trr VGS=0V, - 430 - ns Reverse recovery time IS=12A ,dIF/dt=100A/s (note Qrr 4) - 5.0 - C Reverse recovery charge 2 Ver-1.0