Product Information

FHF10N65B

FHF10N65B electronic component of FeiHong

Datasheet
650V 10A 50W 900mO@10V,5A N Channel TO-220F-3 MOSFETs ROHS

Manufacturer: FeiHong
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8883 ea
Line Total: USD 0.8883

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between
Fri. 08 Mar to Wed. 13 Mar

MOQ : 1
Multiples : 1

Stock Image

FHF10N65B
FeiHong

1 : USD 0.7271
10 : USD 0.6018
50 : USD 0.5413
100 : USD 0.4787
500 : USD 0.4424
1000 : USD 0.4222

     
Manufacturer
Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The FHF10N65B is a 650V 10A 50W 900mO@10V,5A N Channel TO-220F-3 MOSFET manufactured by FeiHong. This device is a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for high-current switching applications, offering superior reliability and performance. It is a three-terminal device with a source, gate, and drain terminal. The 650V rating makes it suitable for applications requiring a higher voltage and the 10A current rating indicates it can handle higher current applications. The 900mO@10V, 5A rating indicates the device has low on-state resistance to effectively handle higher current in on state. The 50W rating indicates its power dissipation. The device is also RoHS compliant, making it environmentally friendly.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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