N N N-CHANNEL MOSFET FHP10N65B/FHF10N65B MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ Vgs=10V 0.75 100% 100% avalanche tested Qg-typ 30nC dv/dt Improved dv/dt capability RoHS RoHS product APPLICATION High efficiency switch mode power supplies Electronic ballast LED LED power supply Package Equivalent Circuit TO-220 TO-220F FHP FHF ABSOLUTE RATINGS (Tc=25 ) Value Parameter Symbol FHP10N65B FHF10N65B Unit VDS 650 V Drain-Source Voltage IDTC=25 10* A * Drain Current -continuous * IDTC=100) 6.2* A 1 IDM 40* A Drain Current pulsenote 1 VGS 30 V Gate-Source Voltage 2 EAS 720 mJ Single Pulsed Avalanche Energynote 2 1 IAR 15 A Avalanche Current note 1 1 EAR 15.5 mJ Repetitive Avalanche Current note 1 3 dv/dt 5.0 V/ns Peak Diode Recovery dv/dt note 3 PD TC=25 156 50 W Power Dissipation -Derate above 25 1.43 0.48 W/ TJTSTG 150 55 to 150 Operating and Storage Temperature Range TL 300 Maximum Lead Temperature for Soldering Purposes * Drain current limited by maximum junction temperature 1 Ver-1.0 N ELECTRICAL CHARACTERISTICS Parameter Symbol Tests conditions Min Typ Max Units Off Characteristics Drain-Source Voltage BVDSS ID=250A, VGS=0V 650 - - V Breakdown Voltage BVDSS/ ID=250A, referenced to 25 - 0.67 - V/ Temperature Coefficient TJ VDS=650V,VGS=0V, TC=25 - - 1 A IDSS Zero Gate Voltage Drain Current VDS=520V, TC=125 - - 100 A IGSS F/R VDS=0V, VGS =30V - - 100 A Gate-body leakage current On-Characteristics VGS(th) VDS = VGS , ID=250A 3.0 - 5.0 V Gate Threshold Voltage RDS(ON) VGS =10V , ID=5A - 0.75 0.9 Static Drain-Source On-Resistance gfs VDS = 40V, ID=5.0Anote 4 - 5.7 - S Forward Transconductance Dynamic Characteristics Ciss - 1450 - Input capacitance VDS=25V, Coss VGS =0V, - 150 - pF Output capacitance f=1.0MHz Crss - 10 - Reverse transfer capacitance Switching Characteristics td(on) - 23 - ns Turn-On delay time VDS=325V, tr - 69 - ns Turn-On rise time ID=10A, RG=25 td(off) - 144 - ns note 45 Turn-Off delay time tf - 77 - ns Turn-Off Fall time Qg - 30 - nC Total Gate Charge VDS =520V , ID=10A , Qgs - 6.8 - nC Gate-Source charge VGS =10V note 45 Qgd - 10.3 - nC Gate-Drain charge Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source IS - - 10 A Diode Forward Current Maximum Pulsed Drain-Source Diode ISM - - 40 A Forward Current VSD VGS=0V, IS=10A - - 1.4 V Drain-Source Diode Forward Voltage trr VGS=0V, - 360 - ns Reverse recovery time IS=10A ,dIF/dt=100A/s (note 4) Qrr - 3.3 - C Reverse recovery charge 2 Ver-1.0