Product Information

FHP740A

Product Image X-ON

Datasheet
MOSFET TO-220 RoHS
Manufacturer: FeiHong



Price (USD)

1: USD 0.6976 ea
Line Total: USD 0.6976

3 - Global Stock
Ships to you between
Wed. 05 Apr to Mon. 10 Apr
MOQ: 1 Multiples:1
Pack Size :   1
Availability Price Quantity
3 - Global Stock


Ships to you between
Wed. 05 Apr to Mon. 10 Apr

MOQ : 1
Multiples : 1

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FHP740A
FeiHong

1 : USD 0.6976
10 : USD 0.5728
30 : USD 0.5193
100 : USD 0.4506
500 : USD 0.42
1000 : USD 0.4022

     
Manufacturer
FeiHong
Product Category
MOSFET
Brand
Feihong
Rohs
Y
Package
TO - 220
Fet Type
NChannel
Drain To Source Voltagevdss
400 V
Continuous Drain Current Id @ 25°C
11 A (T C)
Vgsth Max @ Id
4V @ 250uA
Rds On Max @ Id Vgs
640mO @ 5.5A,10V
Power Dissipation-Max Ta 25°C
193.6 W (Tc)
Drain Source Voltage Vdss
400 V
Continuous Drain Current Id
11 A
Power Dissipation Pd
193.6 W
Drain Source On Resistance Rdson@Vgs Id
640 mOhms @10V , 5.5A
Gate Threshold Voltage Vgsth@Id
4 V @250uA
Type
N Channel
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N N-CHANNEL MOSFET FHP740A MAIN CHARACTERISTICS FEATURES ID 11A Low gate charge VDSS 400V Crss ( 2.8pF) Low Crss (typical 2.8pF ) Rdson-typ Vgs=10V 0.53 Fast switching Qg-typ 15.7nC 100% 100% avalanche tested dv/dt Improved dv/dt capability APPLICATIONS RoHS RoHS product High efficiency switch mode power supplies Power management for inverter systems Package Equivalent Circuit TO-220 FHP ABSOLUTE RATINGS (Tc=25 ) Value Parameter Symbol Unit FHP740A VDS 400 V Drain-Source Voltage 11 A IDTC=25 * IDTC=100) 6.6 A Drain Current -continuous * 1 IDM 44 A Drain Current pulsenote 1 VGS 25 V Gate-Source Voltage 2 EAS 360 mJ Single Pulsed Avalanche Energy note 2 1 IAR 11 A Avalanche Current note 1 1 EAR 19.36 mJ Repetitive Avalanche Current note 1 3 dv/dt 4.5 V/ns Peak Diode Recovery dv/dt note 3 193.6 W PD TC=25 -Derate above 25 1.55 W/ Power Dissipation TJTSTG 15055 to 150 Operating and Storage Temperature Range TL 300 Maximum Lead Temperature for Soldering Purposes * *Drain current limited by maximum junction temperature 1 Ver-1.0 ELECTRICAL CHARACTERISTICS Parameter Symbol Tests conditions Min Typ Max Units Off Characteristics Drain-Source BVDSS ID=250A, VGS=0V 400 - - V Voltage Breakdown BVDSS/ TJ ID=250A, referenced to 25 - 0.4 - V/ Voltage Temperature Coefficient VDS=400V,VGS=0V, TC=25 - - 1 A IDSS Zero Gate Voltage Drain VDS=320V, TC=125 - - 10 A Current IGSS F/R VDS=0V, VGS =20V - - 10 A Gate-body leakage current On-Characteristics VGS(th) VDS = VGS , ID=250A 2.0 - 4.0 V Gate Threshold Voltage RDS(ON) VGS =10V , ID=5.5A - 0.53 0.64 Static Drain-Source On-Resistance gfs VDS = 40V, ID=5.5Anote 4 - 8 - S Forward Transconductance Dynamic Characteristics Ciss - 970 - Input capacitance VDS=25V, Coss VGS =0V, - 150 - pF Output capacitance f=1.0MHz Crss - 2.8 - Reverse transfer capacitance Switching Characteristics td(on) - 33.5 - ns Turn-On delay time VDS=200V, tr - 31.5 - ns ID=11A, Turn-On rise time RG=20 td(off) - 83 - ns VGS =10V Turn-Off delay time note 45 tf - 56 - ns Turn-Off Fall time Qg - 15.7 - nC VDS =320V , Total Gate Charge ID=11A , Qgs - 4.6 - nC VGS =10V Gate-Source charge note 45 Qgd - 10 - nC Gate-Drain charge Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain IS - - 11 A -Source Diode Forward Current Maximum Pulsed ISM - - 44 A Drain-Source Diode Forward Current - VSD VGS=0V, IS=11A - 1.4 V Drain-Source Diode Forward Voltage trr - 400 - ns Reverse recovery time VGS=0V, IS=11A ,dIF/dt=100A/s (note 4) Qrr - 3.80 - C Reverse recovery charge 2 Ver-1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,