Product Information

FHF2N65D

Product Image X-ON

Datasheet
MOSFET TO-220F RoHS
Manufacturer: FeiHong



Price (USD)

1: USD 0.3762 ea
Line Total: USD 0.3762

17 - Global Stock
Ships to you between
Tue. 04 Apr to Fri. 07 Apr
MOQ: 1 Multiples:1
Pack Size :   1
Availability Price Quantity
17 - Global Stock


Ships to you between
Tue. 04 Apr to Fri. 07 Apr

MOQ : 1
Multiples : 1

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FHF2N65D
FeiHong

1 : USD 0.3762
10 : USD 0.308
50 : USD 0.2787
100 : USD 0.2424
500 : USD 0.2261
1000 : USD 0.2163

     
Manufacturer
FeiHong
Product Category
MOSFET
Brand
Feihong
Rohs
Y
Package
TO - 220F
Fet Type
NChannel
Drain To Source Voltagevdss
650 V
Continuous Drain Current Id @ 25°C
2 A (T C)
Vgsth Max @ Id
4V @ 250uA
Rds On Max @ Id Vgs
5.5O @ 1A,10V
Power Dissipation-Max Ta 25°C
27 W (Tc)
Drain Source Voltage Vdss
650 V
Continuous Drain Current Id
2 A
Power Dissipation Pd
27 W
Drain Source On Resistance Rdson@Vgs Id
5.5 Ohms @10V , 1A
Gate Threshold Voltage Vgsth@Id
4 V @250uA
Type
N Channel
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N N-CHANNEL MOSFET FHP2N65D/FHF2N65D/FHU2N65D/FHD2N65D MAIN CHARACTERISTICS FEATURES ID 2A Low gate charge VDSS 650V Crss ( 6pF) Low Crss (typical 6pF ) Rdson-typ Vgs=10V 4.0 Fast switching Qg-typ 8.0nC 100% 100% avalanche tested dv/dt Improved dv/dt capability APPLICATIONS RoHS RoHS product High efficiency switch mode power supplies Equivalent Circuit Electronic ballast LED power supply LED Package G D S G D S TO-251 TO-252 TO-220F TO-220 FHU FHD FHF FHP ABSOLUTE RATINGS (Tc=25 ) Value Parameter Symbol Unit FHU2N65D/FHD2N65D FHP2N65D FHF2N65D VDS 650 V Drain-Source Voltage 2 A IDTC=25 * IDTC=100 ) 1.2 A Drain Current -continuous * 1 IDM 8 A Drain Current pulsenote 1 VGS 30 V Gate-Source Voltage 2 Single Pulsed Avalanche Energy EAS 101 mJ note 2 1 IAR 1.1 A Avalanche Current note 1 1 EAR 6.4 mJ Repetitive Avalanche Current note 1 3 dv/dt 5.0 V/ns Peak Diode Recovery dv/dtnote 3 PD TC=25 35 54 27 W -Derate above 25 0.27 0.43 0.22 W/ Power Dissipation TJ TSTG 15055 to 150 Operating and Storage Temperature Range TL 300 Maximum Lead Temperature for Soldering Purposes * *Drain current limited by maximum junction temperature 1 Ver-1.0 ELECTRICAL CHARACTERISTICS Parameter Symbol Tests conditions Min Typ Max Units Off Characteristics Drain-Source BVDSS ID=250A, VGS=0V 650 - - V Voltage Breakdown BVDSS/ TJ ID=250A, referenced to 25 - 0.6 - V/ Voltage Temperature Coefficient VDS=650V,VGS=0V, TC=25 - - 1 A IDSS Zero Gate Voltage Drain VDS=520V, TC=125 - - 100 A Current IGSS F/R VDS=0V, VGS =30V - - 100 A Gate-body leakage current On-Characteristics VGS(th) VDS = VGS , ID=250A 2.0 - 4.0 V Gate Threshold Voltage RDS(ON) VGS =10V , ID=1A - 4.5 5.5 Static Drain-Source On-Resistance gfs VDS = 15V, ID=1A note 4 1 - - S Forward Transconductance Dynamic Characteristics Ciss - 290 - Input capacitance VDS=25V, Coss VGS =0V, - 31 - pF Output capacitance f=1.0MHz Crss - 6 - Reverse transfer capacitance Switching Characteristics td(on) - 8 - ns Turn-On delay time VDS=325V, tr - 6 - ns ID=2A, Turn-On rise time RG=9.1 td(off) - 30 - ns VGS =10V Turn-Off delay time note 4 5 tf - 11 - ns Turn-Off Fall time Qg - 9 - nC VDS =325V , Total Gate Charge ID=2A , Qgs - 1.5 - nC VGS =10V Gate-Source charge note 4 5 Qgd - 4 - nC Gate-Drain charge Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain IS - - 2 A -Source Diode Forward Current Maximum Pulsed ISM - - 8 A Drain-Source Diode Forward Current - VSD VGS=0V, IS=2A - 1.5 V Drain-Source Diode Forward Voltage trr - 425 - ns Reverse recovery time VGS=0V, IS=2A ,dIF/dt=100A/s (note 4) Qrr - 1140 - nC Reverse recovery charge 2 Ver-1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,