Product Information

FHU2N60A

FHU2N60A electronic component of FeiHong

Datasheet
600V 2A 35W 4.5O@10V,1A N Channel TO-251 MOSFETs ROHS
Manufacturer: FeiHong
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2684 ea
Line Total: USD 0.2684

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - Global Stock


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Mon. 09 Oct to Thu. 12 Oct

MOQ : 1
Multiples : 1

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FHU2N60A
FeiHong

1 : USD 0.2684
10 : USD 0.2221
30 : USD 0.1886
100 : USD 0.1609
500 : USD 0.1562
1000 : USD 0.1539

Read More Specifications

     
Manufacturer
FeiHong
Product Category
MOSFET
Brand
Feihong
Rohs
Y
Package
TO - 251
Fet Type
NChannel
Drain To Source Voltagevdss
600 V
Continuous Drain Current Id @ 25°C
2 A (T C)
Vgsth Max @ Id
4V @ 250uA
Rds On Max @ Id Vgs
4.5O @ 1A,10V
Power Dissipation-Max Ta 25°C
35 W (Tc)
Drain Source Voltage Vdss
600 V
Continuous Drain Current Id
2 A
Power Dissipation Pd
35 W
Drain Source On Resistance Rdson@Vgs Id
4.5 Ohms @10V , 1A
Gate Threshold Voltage Vgsth@Id
4 V @250uA
Type
N Channel
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Additional Infomation About Product

The FHU2N60A with 600V 2A 35W 4.5O@10V,1A N Channel TO-251 MOSFETs ROHS is an insulated-gate field-effect transistor (IGFET) manufactured by FeiHong. It is a type of transistor used to control current and voltage by creating a channel between the source and drain, without using a physical gate. It is ROHS certified and has a maximum voltage of 600V, a current of 2A, and a power of 35W. It also has a resistance of 4.5O@10V and a 1A N channel TO-251 casing.

Australian Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,