Product Information

3400H

3400H electronic component of GOFORD

Datasheet
MOSFET N Trench 30V 5.8A 1.45V @ 250uA 28 mΩ @ 2A,10V SOT-23 (SOT-23-3) RoHS

Manufacturer: GOFORD
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0654 ea
Line Total: USD 0.654

669 - Global Stock
Ships to you between
Thu. 11 Apr to Tue. 16 Apr
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
649 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 10
Multiples : 10

Stock Image

3400H
GOFORD

10 : USD 0.0571
100 : USD 0.0467
300 : USD 0.0415
3000 : USD 0.0329
6000 : USD 0.0297
9000 : USD 0.0282

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The 3400H with MOSFET N Trench 30V 5.8A 1.45V @ 250uA 28 mΩ @ 2A,10V SOT-23 (SOT-23-3) RoHS manufactured by GOFORD is a N-channel Field Effect Transistor (FET) in a SOT-23 package from GOFORD. It features a voltage rating of 30V, a gate-source voltage of 1.45V @250uA, a drain-source on-resistance of 28 mΩ @ 2A and 10V, and gate-source leakage current of 5.8A. This device is RoHS compliant, and is suitable for telecom, consumer, industrial, automotive, LED drivers, and computer applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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