Product Information

3400H

3400H electronic component of GOFORD

Datasheet
MOSFET N Trench 30V 5.8A 1.45V @ 250uA 28 mΩ @ 2A,10V SOT-23 (SOT-23-3) RoHS
Manufacturer: GOFORD
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0776 ea
Line Total: USD 0.776

863 - Global Stock
Ships to you between
Thu. 12 Oct to Tue. 17 Oct
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
785 - Global Stock


Ships to you between
Thu. 12 Oct to Tue. 17 Oct

MOQ : 10
Multiples : 10

Stock Image

3400H
GOFORD

10 : USD 0.0675
100 : USD 0.0552
300 : USD 0.049
3000 : USD 0.0389
6000 : USD 0.0352
9000 : USD 0.0333

Read More Specifications

     
Manufacturer
GOFORD
Product Category
MOSFET
Category
MOSFET
Rohs
y
Package
SOT - 23 (SOT - 23 - 3)
Brand Category
GOFORD
Fet Type
n trench
Drain To Source Voltagevdss
30 V
Continuous Drain Current Id @ 25°C
5.8 A
Vgsth Max @ Id
1.45 V @ 250ua
Rds On Max @ Id Vgs
28 m @ 2a,10v
Power Dissipation-Max Ta
1.4 W
Drain Source Voltage Vdss
30 V
Continuous Drain Current Id
5.8 A
Drain Source On Resistance Rdson@Vgs Id
28 mOhms @10V , 2A
Power Dissipation Pd
1.4 W
Gate Threshold Voltage Vgsth@Id
1.45 V @250uA
Type
N Channel
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Additional Infomation About Product

The 3400H with MOSFET N Trench 30V 5.8A 1.45V @ 250uA 28 mΩ @ 2A,10V SOT-23 (SOT-23-3) RoHS manufactured by GOFORD is a N-channel Field Effect Transistor (FET) in a SOT-23 package from GOFORD. It features a voltage rating of 30V, a gate-source voltage of 1.45V @250uA, a drain-source on-resistance of 28 mΩ @ 2A and 10V, and gate-source leakage current of 5.8A. This device is RoHS compliant, and is suitable for telecom, consumer, industrial, automotive, LED drivers, and computer applications.

Australian Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,