GOFORD 3415A Description The A uses adv3415 anced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protected. General Features Schematic diagram VD SS R D S(O N ) R D S(O N ) ID (Typ) (Typ) -4.5V -2.5V 35.8m 46.4m -5.6 -20V A High Power and current handing capability Marking and pin Assignment RoHS Compliant PS:Part number:3415A Mark:3415 Surface mount package Application PWM application Load switch SOT-23 Ordering Information Part Number Marking Ca se Packaging 3415A 3415 SOT-23 3000pcs/Reel Absolute Maximum Ratings (TA=25unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage -20 V VDS Gate-Source Voltage 10 V VGS Drain Current-Continuous -5.6 A I D Drain Current-Pulsed (Note 1) -16 A I DM Maximum Power Dissipation 1.4 W P D Operating Junction and Storage Temperature Range T ,T -55 To 150 J STG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R 89.3 /W JA Electrical Characteristics (TA=25unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV V =0V I =-250A -20 - V DSS GS D Page 1 HTTP://www.gofordsemi.com T EL 0755 - 2 9 961262 F A X 0755 - 2996 146 6GOFORD 3415A Zero Gate Voltage Drain Current I V =-20V,V=0V - - 1 A DSS DS GS Gate-Body Leakage Current I V =10V,V=0V - - 10 A GSS GS DS On Characteristics (Note 3) Gate Threshold Voltage V V =V ,I =-250A -0.45 -0.68 -1.1 V GS(th) DS GS D V =-4.5V, I=-1A - 35.8 40 m GS D Drain-Source On-State Resistance R DS(ON) V =-2.5V, I=-0.5A - 46.4 60 m GS D Forward Transconductance g V =-5V,I=-4A 8 - - S FS DS D Dynamic Characteristics (Note4) Input Capacitance C - 950 - PF lss V =-10V,V =0V, DS GS Output Capacitance C - 165 - PF oss F=1.0MHz Reverse Transfer Capacitance C - 120 - PF rss Switching Characteristics (Note 4) Turn-on Delay Time t - 12 - nS d(on) Turn-on Rise Time t V =-10V,R =2. 5 - 10 - nS r DD L Turn-Off Delay Time t V =-4.5V,R =3 - 19 - nS d(off) GS GEN Turn-Off Fall Time t - 25 - nS f Total Gate Charge Q - 12 - nC g V =-10V,I =-4A, DS D Gate-Source Charge Q - 1.4 - nC gs V =-4.5V GS Gate-Drain Charge Q - 3.6 - nC gd Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V V =0V,I=-2A - - -1.2 V SD GS S Diode Forward Current (Note 2) I - - -2.2 A S Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production Page 2 HTTP://www.gofordsemi.com T EL 0755 - 2 9 961262 F A X 0755 - 2996 146 6