80N06 GOFORD

80N06 electronic component of GOFORD
80N06 GOFORD
80N06 MOSFETs
80N06  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 80N06 MOSFETs across the USA, India, Europe, Australia, and various other global locations. 80N06 MOSFETs are a product manufactured by GOFORD. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. 80N06
Manufacturer: GOFORD
Category: MOSFETs
Description: MOSFET N Trench 60V 80A (Tc) 2.4V @ 250uA 13 mΩ @ 30A,10V TO-251 RoHS
Datasheet: 80N06 Datasheet (PDF)
Price (USD)
1: USD 0.547 ea
Line Total: USD 0.55 
Availability : 0
  
QtyUnit Price
1$ 0.547
10$ 0.4535
30$ 0.3857
100$ 0.3298
500$ 0.3204
1000$ 0.3156

Availability 0
Ship by Fri. 05 Sep to Wed. 10 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.547
10$ 0.4535
30$ 0.3857
100$ 0.3298
500$ 0.3204
1000$ 0.3156

   
Manufacturer
Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
LoadingGif
 
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We are delighted to provide the 80N06 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 80N06 and other electronic components in the MOSFETs category and beyond.

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The 80N06 with MOSFET is an N-Channel enhancement mode power field-effect transistor (MOSFET). It is a TO-251 package and is manufactured by GOFORD. It has a maximum drain source voltage of 60V and a maximum drain source current of 80A. The transistor has a drain source on-state resistance of 13mO at 30A. It has a temperature coefficient of 2.4V@250uA. It is compliant with the RoHS regulations.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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