Product Information

G110N06K

G110N06K electronic component of GOFORD

Datasheet
MOSFET N Channel 55V 110A(Tc) 2V @ 250uA 6.4mΩ @ 40A,10V TO-252 RoHS

Manufacturer: GOFORD
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6808 ea
Line Total: USD 0.6808

2004 - Global Stock
Ships to you between
Fri. 12 Apr to Wed. 17 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1674 - Global Stock


Ships to you between
Fri. 12 Apr to Wed. 17 Apr

MOQ : 1
Multiples : 1

Stock Image

G110N06K
GOFORD

1 : USD 0.4596
10 : USD 0.406
30 : USD 0.3823
100 : USD 0.3544
500 : USD 0.3115
1000 : USD 0.303

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The G110N06K with MOSFET N Channel 55V 110A(Tc) 2V @ 250uA 6.4mO @ 40A,10V TO-252 RoHS is an electronic part manufactured by GOFORD. It is a MOSFET N-Channel device capable of withstanding highest temperature conditions and is suited for high-power switching applications. It has a high-voltage threshold of 55V and low on-state resistance of 6.4 mO at 40A. It has a continuous drain current of 110A and a gate-source threshold voltage of 2V at 250uA. It is housed in a TO-252 RoHS compliant small plastic package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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