X-On Electronics has gained recognition as a prominent supplier of G2012 MOSFETs across the USA, India, Europe, Australia, and various other global locations. G2012 MOSFETs are a product manufactured by GOFORD. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

G2012 GOFORD

G2012 electronic component of GOFORD
G2012 GOFORD
G2012 MOSFETs
G2012  Semiconductors

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See Product Specifications
Part No. G2012
Manufacturer: GOFORD
Category: MOSFETs
Description: DFN2x2-6L MOSFETs ROHS
Datasheet: G2012 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.101 ea
Line Total: USD 0.5 
Availability - 82
Ship by Fri. 23 May to Wed. 28 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
82
Ship by Fri. 23 May to Wed. 28 May
MOQ : 5
Multiples : 5
5 : USD 0.101
50 : USD 0.099
150 : USD 0.0974
500 : USD 0.0648

   
Manufacturer
Product Category
Category
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
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We are delighted to provide the G2012 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the G2012 and other electronic components in the MOSFETs category and beyond.

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G2012 with DFN2x2-6L MOSFETs ROHS is a low power P-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) manufactured by GOFORD. It is designed for general purpose signal management, low-side switch load drive, and other applications requiring low drain-source voltage with current handling capabilities up to 6A. It has a drain-source breakdown voltage (Vbs) of 20V and drain-source On-state resistance (Rds(on)) of 0.42 ohms. It features built-in protection against electro-static discharge (ESD) and thermal overloads, and its tiny footprint of only 2x2mm. It is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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