GOFORD G50N03K N-Channel Enhancement Mode Power MOSFET Description The G50N03K uses advanced trench technology to provide excellent R , low gate charge. It can be used in a wide DS(ON) variety of applications. General Features V 30V DS Schematic diagram I (at V = 10V) 65A D GS R (at V = 10V) < 7m DS(ON) GS R (at V = 5V) < 12m DS(ON) GS 100% Avalanche Tested RoHS Compliant Application Power switch DC/DC converters TO-252 Device Package Marking Packaging 2500pcs/Reel G50N03K TO-252 G50N03 Absolute Maximum Ratings T = 25C, unless otherwise noted C Parameter Symbol Value Unit Drain-Source Voltage V 30 V DS Continuous Drain Current I 65 A D Pulsed Drain Current (note1) I 260 A DM Gate-Source Voltage V 20 V GS Power Dissipation P 48 W D Operating Junction and Storage Temperature Range T , T -55 To 150 C J stg Thermal Resistance Parameter Symbol Value Unit C/W Thermal Resistance, Junction-to-Case R 2.59 thJC www.gofordsemi.com TEL 0755-29961262 FAX:0755-29961466GOFORD G50N03K Specifications T = 25C, unless otherwise noted J Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V V = 0V, I = 250A 30 -- -- V (BR)DSS GS D Zero Gate Voltage Drain Current I V = 30V, V = 0V -- -- 1 A DSS DS GS Gate-Source Leakage I -- -- nA V = 20V 100 GSS GS Gate-Source Threshold Voltage V V = V , I = 250A 1 1.45 2.5 V GS(th) DS GS D V = 10V, I = 20A -- 5.2 7 GS D Drain-Source On-Resistance R m DS(on) V = 5V, I = 15A -- 7 12 GS D Forward Transconductance g VDS=10V,ID=10A -- 25 -- S FS Dynamic Parameters Input Capacitance C -- 950 -- iss V = 0V, GS Output Capacitance C V = 15V, -- 280 -- pF oss DS f = 1.0MHz Reverse Transfer Capacitance C -- 160 -- rss Total Gate Charge Q -- 16.6 -- g V = 10V, DD Gate-Source Charge Q I = 20A, -- 3.6 -- nC gs D V = 10V GS Gate-Drain Charge Q -- 3 -- gd Turn-on Delay Time t -- 10 -- d(on) Turn-on Rise Time t V = 15V, -- 8 -- r DD I = 20A, ns D Turn-off Delay Time t R = 1.8 -- 30 -- d(off) G Turn-off Fall Time t -- 5 -- f Drain-Source Body Diode Characteristics Continuous Body Diode Current I T = 25C -- -- 65 A S C Body Diode Voltage V T = 25C, I = 10A, V = 0V -- -- 1.2 V SD J SD GS Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical R G www.gofordsemi.com TEL 0755-29961262 FAX:0755-29961466