Product Information

G50N03K

G50N03K electronic component of GOFORD

Datasheet
MOSFET N Channel 30V 65A(Tc) 2.5V @ 250uA 7mΩ @ 20A,10V TO-252 RoHS

Manufacturer: GOFORD
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2521 ea
Line Total: USD 0.2521

2273 - Global Stock
Ships to you between
Thu. 11 Apr to Tue. 16 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
853 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 5
Multiples : 5

Stock Image

G50N03K
GOFORD

5 : USD 0.1761
50 : USD 0.1559
150 : USD 0.1472
500 : USD 0.1363
2500 : USD 0.1111
5000 : USD 0.1083

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The G50N03K from GOFORD is a N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) in a TO-252 RoHS (Restriction of Hazardous Substances) package, with 30V, 65A(Tc) power, 2.5V gate threshold voltage, 250uA gate leakage current, 7mO maximum RDS(on) resistance at 20A, and 10V drain-source breakdown voltage. It is suitable for a broad range of low and medium-power applications, including motor control, power management, and switching power supplies.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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