Product Information


G7P03S electronic component of GOFORD

30V 9A 16mΩ@10V,3A 2.7W 1.6V@250uA 158pF@15V P Channel 1253pF@15V 2.45nC@10V -55℃~+150℃@(Tj) SOP-8 MOSFETs ROHS

Manufacturer: GOFORD
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.2805 ea
Line Total: USD 0.2805

627 - Global Stock
Ships to you between
Mon. 16 Oct to Thu. 19 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
666 - Global Stock

Ships to you between
Mon. 16 Oct to Thu. 19 Oct

MOQ : 1
Multiples : 1

Stock Image


1 : USD 0.243
10 : USD 0.1943
30 : USD 0.1735
100 : USD 0.1474
500 : USD 0.1358
1000 : USD 0.1219

Product Category
Drain Source Voltage Vdss
30 V
Continuous Drain Current Id
9 A
Drain Source On Resistance Rdson@Vgs Id
16 mOhms @10V , 3A
Power Dissipation Pd
2.7 W
Gate Threshold Voltage Vgsth@Id
1.6 V @250uA
Reverse Transfer Capacitance Crss@Vds
158 pF @15V
P Channel
Input Capacitance Ciss@Vds
1253 pF @15V
Total Gate Charge Qg@Vgs
2.45 nC @10V
Operating Temperature
- 55 C ~ + 150 C @ (Tj)
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.The GOFORD G7P03S is a SOP-8 MOSFET that complies with the RoHS environmental standard. The voltage and current ratings of the device are 30V 9A, respectively. It has a low on-state resistance of 16mO when operated at 10V and 3A. The power dissipation rating is 2.7 W and the gate-source threshold voltage is 1.6V for the device when operated at 250uA. The capacitance of the gate-drain and gate-source junctions are 158pF and 1253pF, respectively, when operated at 15V. The maximum junction-to-ambient thermal resistance is 2.45nC @ 10V. The MOSFET has a wide temperature range of operation from -55? to +150? (Tj).

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free