Product Information


GC11N65K electronic component of GOFORD

MOSFET N Trench 650V 11A (Tc) 4V @ 250uA 360 mΩ @ 5.5A,10V TO-252 RoHS

Manufacturer: GOFORD
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.51 ea
Line Total: USD 1.51

760 - Global Stock
Ships to you between
Fri. 06 Oct to Wed. 11 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
245 - Global Stock

Ships to you between
Fri. 06 Oct to Wed. 11 Oct

MOQ : 1
Multiples : 1

Stock Image


1 : USD 0.8871
10 : USD 0.7904
30 : USD 0.7755
100 : USD 0.6509

Product Category
TO - 252
Brand Category
Fet Type
n trench
Drain To Source Voltagevdss
650 V
Continuous Drain Current Id @ 25°C
11 A (t C)
Vgsth Max @ Id
4v @ 250ua
Rds On Max @ Id Vgs
360 m @ 5.5a,10v
Power Dissipation-Max Ta
78 W
Drain Source Voltage Vdss
650 V
Continuous Drain Current Id
11 A
Power Dissipation Pd
78 W
Drain Source On Resistance Rdson@Vgs Id
360 mOhms @10V , 5.5A
Gate Threshold Voltage Vgsth@Id
4 V @250uA
N Channel
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The GC11N65K with MOSFET N Trench is a TO-252 RoHS manufactured by GOFORD. It is rated for 650V 11A and has a threshold voltage (Tc) of 4V with a threshold current of 250uA and a on-resistance of 360 mO and an on-current of 5.5A at 10V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free