GT130N03D5 GOFORD

GT130N03D5 electronic component of GOFORD
GT130N03D5 GOFORD
GT130N03D5 MOSFETs
GT130N03D5  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of GT130N03D5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. GT130N03D5 MOSFETs are a product manufactured by GOFORD. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. GT130N03D5
Manufacturer: GOFORD
Category: MOSFETs
Description: MOSFET DFN8L-5×6 RoHS
Datasheet: GT130N03D5 Datasheet (PDF)
Price (USD)
1: USD 0.7255 ea
Line Total: USD 0.73 
Availability : 0
  
QtyUnit Price
1$ 0.7255
10$ 0.594
30$ 0.4991
100$ 0.4212
500$ 0.4091
1000$ 0.4018

Availability 0
Ship by Thu. 30 Oct to Wed. 05 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7255
10$ 0.594
30$ 0.4991
100$ 0.4212
500$ 0.4091
1000$ 0.4018

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
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We are delighted to provide the GT130N03D5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GT130N03D5 and other electronic components in the MOSFETs category and beyond.

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The GOFORD GT130N03D5 is a n-channel MOSFET packaged in a DFN8L-5×6 RoHS compliant package. The MOSFET has an enhanced performance architecture that ensures improved gate performance for fast switching applications. It features a drain-to-source breakdown voltage of 30V, a continuous drain current of 130A, and an on-state resistance of 0.036 m?. It also offers an operating temperature range of -55 to 175 °C and a maximum junction temperature of 225 °C. The design utilizes an advanced vertical structure optimized for low on-state resistance as well as improved noise immunity. It is optimized for applications that require fast switching speed and a large driving capability, making it ideal for use in power supplies, lighting controls, and other power management applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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