AUIRF540Z AUTOMOTIVE GRADE AUIRF540ZS Features HEXFET Power MOSFET Advanced Process Technology V 100V DSS Ultra Low On-Resistance R typ. DS(on) 175C Operating Temperature 21m Fast Switching max. 26.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant I D 36A Automotive Qualified * Description D Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing S D S techniques to achieve extremely low on-resistance per silicon G G area. Additional features of this design are a 175C junction 2 TO-220AB operating temperature, fast switching speed and improved D Pak AUIRF540Z AUIRF540ZS repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRF540Z TO-220 Tube 50 AUIRF540Z Tube 50 AUIRF540ZS 2 AUIRF540ZS D -Pak Tape and Reel Left 800 AUIRF540ZSTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 36 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 25 A D C GS I Pulsed Drain Current 140 DM P T = 25C Maximum Power Dissipation 92 W D C Linear Derating Factor 0.61 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 83 AS mJ E (tested) Single Pulse Avalanche Energy Tested Value 120 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.64 R JC Case-to-Sink, Flat, Greased Surface 0.50 R CS C/W R Junction-to-Ambient 62 JA Junction-to-Ambient ( PCB Mount, steady state) 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-09-22 AUIRF540Z/S Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.093 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 21 26.5 m V = 10V, I = 22A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 36 S V = 25V, I = 22A DS D 20 V =100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 100V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 42 63 I = 22A g D Q Gate-to-Source Charge 9.7 nC V = 80V gs DS Q Gate-to-Drain Charge 15 V = 10V gd GS t Turn-On Delay Time 15 V = 50V d(on) DD t Rise Time 51 I = 22A r D ns t Turn-Off Delay Time 43 R = 12 d(off) G V = 10V t Fall Time 39 f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 1770 V = 0V iss GS C Output Capacitance 180 V = 25V oss DS = 1.0MHz, See Fig. 5 C Reverse Transfer Capacitance 100 rss pF C Output Capacitance 730 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 110 V = 0V, V = 80V = 1.0MHz oss GS DS C Effective Output Capacitance 170 V = 0V, V = 0V to 80V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 36 S (Body Diode) showing the A Pulsed Source Current integral reverse I 140 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 22A,V = 0V SD J S GS t Reverse Recovery Time 33 50 ns T = 25C ,I = 22A, V = 50V rr J F DD Q Reverse Recovery Charge 41 62 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T , starting T = 25C, L = 0.46mH, R = 25 , I = 20A, V =10V. Part not recommended for use above this value. Jmax J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population, T = 25C, L = 0.46mH, R = 25, I = 20A, V =10V. J G AS GS This is only applied to TO-220AB package. 2 This is applied to D Pak When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 2 2017-09-22