PD - 96415 AUTOMOTIVE GRADE AUIRFZ44V HEXFET Power MOSFET Features D V Advanced Planar Technology 60V (BR)DSS Low On-Resistance Dynamic dV/dT Rating max. R 16.5m DS(on) 175C Operating Temperature G Fast Switching I 55A D Fully Avalanche Rated S Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified * Description S D Specifically designed for Automotive applications, this G stripe planar design of HEXFET Power MOSFETs TO-220AB utilizes the latest processing techniques to achieve low AUIRFZ44V on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design GD S that HEXFET power MOSFETs are well known for, Gate Drain Source provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 55 GS D C I T = 100C Continuous Drain Current, V 10V 39 A GS D C 220 I Pulsed Drain Current DM P T = 25C Power Dissipation 115 W D C 0.77 Linear Derating Factor W/C 20 V Gate-to-Source Voltage V GS E Single Pulse Avalanche Energy 115 mJ AS I 55 Avalanche Current A AR E Repetitive Avalanche Energy 11 mJ AR dv/dt Peak Diode Recovery dv/dt 4.5 V/ns T Operating Junction and J -55 to + 175 T Storage Temperature Range C STG 300 (1.6mm from case ) Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.3 JC C/W R Case-to-Sink, Flat, Greased Surface 0.50 CS R Junction-to-Ambient (PCB mounted) 62 JA HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at AUIRFZ44V Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250 A GS D V /T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.062 V/C Reference to 25C, I = 1mA D 16.5 = 10V, I = 31A R Static Drain-to-Source On-Resistance m V DS(on) GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D gfs Forward Transconductance 24 S V = 25V, I = 31A DS D I DSS Drain-to-Source Leakage Current 25 A V = 60V, V = 0V DS GS 250 V = 48V, V = 0V, T = 150C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 67 I = 51A g D Q gs Gate-to-Source Charge 18 nC V = 48V DS Q gd Gate-to-Drain Mille) Charge 25 V = 10V, See Fig.6 and 13 GS t Turn-On Delay Time 13 V = 30V d(on) DD t r Rise Time 97 I = 51A D t Turn-Off Delay Time 40 ns R = 9.1 d(off) G t f Fall Time 57 R = 0.6, See Fig.10 D L D Internal Drain Inductance Between lead, D 4.5 nH 6mm (0.25in.) G L Internal Source Inductance Between lead, S 7.5 S and center of die contact C Input Capacitance 1812 V = 0V iss GS C oss Output Capacitance 393 pF V = 25V DS C Reverse Transfer Capacitance 103 = 1.0MHz, See Fig.5 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 55 (Body Diode) A showing the G I Pulsed Source Current integral reverse SM 220 S (Body Diode) p-n junction diode. V Diode Forward Voltage 2.5 V T = 25C, I = 51A, V = 0V SD J S GS t Reverse Recovery Time 70 105 ns T = 25C, I = 51A rr J F di/dt = 100A/s Q Reverse Recovery Charge 146 219 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction temperature. ( See fig. 11 ) Starting T = 25C, L = 89H, R = 25, I = 51A. (See Figure 12) J G AS I 51A di/d 227A/s, V V , T 175C SD DD (BR)DSS J Pulse width 300s duty cycle 2%. 2 www.irf.com