BCM846S NPN Silicon AF Transistor Array Precision matched transistor pair: I 10% C 4 5 3 For current mirror applications 6 2 1 Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors Complementary type: BCM856S BCM846S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 B2 E2 6 54 TR2 TR1 1 2 3 E1 B1 C2 EHA07178 Type Marking Pin Configuration Package BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings Parameter Symbol Value Unit 65 V Collector-emitter voltage V CEO 80 Collector-emitter voltage V CES 80 Collector-base voltage V CBO 6 Emitter-base voltage V EBO 100 mA Collector current I C 200 Peak collector current, t 10 ms I p CM 250 mW Total power dissipation- P tot T = 115 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 1 2011-10-05BCM846S Thermal Resistance Parameter Symbol Value Unit 1) 140 K/W Junction - soldering point R thJS Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 65 - - V Collector-emitter breakdown voltage V (BR)CEO I = 10 mA, I = 0 A C B Collector-base breakdown voltage V 80 - - (BR)CBO I = 10 A, I = 0 A C E Collector-emitter breakdown voltage V 80 - - (BR)CES I = 10 A, V = 0 A C BE Emitter-base breakdown voltage V 6 - - (BR)EBO I = 10 A, I = 0 A E C Collector-base cutoff current I A CBO V = 30 V, I = 0 A - - 0.015 CB E V = 30 V, I = 0 A, T = 150 C - - 5 CB E A 2) DC current gain- h - FE I = 10 A, V = 5 V - 250 - C CE I = 2 mA, V = 5 V 200 290 450 C CE 2) Collector-emitter saturation voltage V mV CEsat I = 10 mA, I = 0.5 mA - 90 300 C B I = 100 mA, I = 5 mA - 200 650 C B 2) Base emitter saturation voltage V BEsat I = 10 mA, I = 0.5 mA - 700 - C B I = 100 mA, I = 5 mA - 900 - C B 2) Base-emitter voltage- V BE(ON) I = 2 mA, V = 5 V 580 660 700 C CE I = 10 mA, V = 5 V - - 770 C CE Matching I % C I = 1 A, V = V = 1.0V -10 - 10 B CE1 CE2 I = 100 A, V = V = 1.0V -10 - 10 B CE1 CE2 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2 Puls test: t < 300s D < 2% 2 2011-10-05