BFN27 PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets 2 3 and switching power supplies 1 High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN26 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BFN27 FLs SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 300 V Collector-emitter voltage V CEO 300 Collector-base voltage V CBO 5 Emitter-base voltage V EBO 200 mA Collector current I C 500 Peak collector current, t 10 ms I p CM 100 Base current I B 200 Peak base current I BM 360 mW Total power dissipation- P tot T 74 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 210 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-12-19 1BFN27 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 300 - - Collector-emitter breakdown voltage V V (BR)CEO I = 1 mA, I = 0 C B Collector-base breakdown voltage V 300 - - (BR)CBO I = 100 A, I = 0 C E Emitter-base breakdown voltage V 5 - - (BR)EBO I = 100 A, I = 0 E C Collector-base cutoff current I A CBO V = 250 V, I = 0 - - 0.1 CB E V = 250 V, I = 0 , T = 150 C - - 20 CB E A - - 100 nA Emitter-base cutoff current I EBO V = 5 V, I = 0 EB C 1) - DC current gain h FE I = 1 mA, V = 10 V 25 - - C CE I = 10 mA, V = 10 V 40 - - C CE I = 30 mA, V = 10 V 30 - - C CE 1) Collector-emitter saturation voltage V - - 0.5 V CEsat I = 20 mA, I = 2 mA C B 1) Base emitter saturation voltage V - - 0.9 BEsat I = 20 mA, I = 2 mA C B AC Characteristics - 100 - MHz Transition frequency f T I = 20 MHz, V = 10 V, f = 100 MHz C CE - 2.5 - pF Collector-base capacitance C cb V = 30 V, f = 1 MHz CB 1 Pulse test: t < 300s D < 2% 2011-12-19 2