IPB025N10N3GATMA1 Infineon

IPB025N10N3GATMA1 electronic component of Infineon
IPB025N10N3GATMA1 Infineon
IPB025N10N3GATMA1 MOSFETs
IPB025N10N3GATMA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IPB025N10N3GATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB025N10N3GATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IPB025N10N3GATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Datasheet: IPB025N10N3GATMA1 Datasheet (PDF)
Price (USD)
1000: USD 2.6125 ea
Line Total: USD 2612.5 
Availability : 29100
  
Ship by Tue. 25 Nov to Mon. 01 Dec
QtyUnit Price
1000$ 2.6125

Availability 970
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 5.5875


Availability 638
Ship by Fri. 21 Nov to Tue. 25 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.3875
10$ 4.169
100$ 3.355
500$ 3.322
1000$ 2.937
5000$ 2.882


Availability 364
Ship by Fri. 21 Nov to Tue. 25 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 7.518
3$ 6.692
4$ 5.082
11$ 4.802


Availability 1052450
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 4.226
542000$ 3.8802
813000$ 3.6294
1084000$ 3.4414


Availability 29100
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 2.6125


Availability 3365
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 34
Multiples : 1
QtyUnit Price
34$ 7.748
48$ 5.525
52$ 5.018
100$ 4.0985


Availability 963
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 113
Multiples : 1
QtyUnit Price
113$ 4.1719
500$ 3.9531
1000$ 3.7344
10000$ 3.5157


Availability 1940
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 4.7436

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain-Source Voltage
On-State Resistance
Drain Current
Gate-Source Voltage
Power Dissipation
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We are delighted to provide the IPB025N10N3GATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB025N10N3GATMA1 and other electronic components in the MOSFETs category and beyond.

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The Infineon IPB025N10N3GATMA1 is a N-channel, unipolar transitor with a voltage rating of 100V and a current rating of 180A. It is capable of dissipating power at up to 300W and comes in a PG-TO263-7 package. It is ideal for use as an amplifier, switch or logic level shifter in high power applications. This Transistor features short circuit protection due to the intrinsic body diode and it provides fast switching capability.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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