MOSFET Metal Oxide Semiconductor Field Effect Transistor TM OptiMOS TM OptiMOS FD Power-Transistor, 250 V IPP220N25NFD Data Sheet Rev. 2.0 Final Power Management & MultimarketTM OptiMOS FD Power-Transistor, 250 V IPP220N25NFD TO-220-3 1 Description tab Features N-channel, normal level Fast Diode (FD) with reduced Q rr Optimized for hard commutation ruggedness Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Halogen-free according to IEC61249-2-21 Drain Pin 2, tab Table 1 Key Performance Parameters Parameter Value Unit Gate V 250 V DS Pin 1 R 22 m DS(on),max Source I 61 A D Pin 3 Type / Ordering Code Package Marking Related Links IPP220N25NFD PG-TO220-3 220N25NF - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2014-02-06