IQE006NE2LM5ATMA1 Infineon

IQE006NE2LM5 MOSFET TM PG-TSON-8-4 OptiMOS 5 Power-Transistor , 25 V Features 1 2 Very low on-resistance R V =4.5 V DS(on) GS 3 4 100% avalanche tested Superior thermal resistance N-channel 8 7 Pb-free lead plating RoHS compliant 6 5 Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applications Drain Pin 5-8 Table 1 Key Performance Parameters Parameter Value Unit Gate Pin 4 V 25 V DS Source RDS(on),max 0.65 m Pin 1-3 I 298 A D Q 41 nC oss Q (0V..4.5V) 29 nC G Type / Ordering Code Package Marking Related Links IQE006NE2LM5 PG-TSON-8-4 006E2L5 - Final Data Sheet 1 Rev. 2.1, 2020-03-16TM OptiMOS 5 Power-Transistor , 25 V IQE006NE2LM5 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 13 Trademarks . 13 Disclaimer 13 Final Data Sheet 2 Rev. 2.1, 2020-03-16