A A 1 8 S D 2 7 S D % & 3 6 S D ( )( 4 5 * G D 100% R Tested G Top View * +,-*, . / ( ( % 0 1 % 2 3 ( % ( ( ( / ( ( ( +,-*, 4 *, 5 3 % ( ( 1 ( ( ( %% 2 6 ( ( / ( ( ( ( SO-8 % ( % 5 ( % %% 2 7 % 3 % ( ( %% ( ( ( ( % 2 % 5 ( ( % % 3 (3 ( 0 2 4 ( % 8267 % % 4 9 %% 2 Absolute Maximum Ratings Symbol Parameter Max Units V DS 30 Drain-to-Source Voltage V V 20 GS Gate-to-Source Voltage I T = 25C 13 D A Continuous Drain Current, V 10V GS I T = 70C Continuous Drain Current, V 10V 9.2 A D A GS I 58 Pulsed Drain Current DM P T = 25C 2.5 W D A Power Dissipation Linear Derating Factor 0.02 mW/C E 260 mJ Single Pulse Avalanche Energency AS Peak Diode Recovery dv/dt V/ns dv/dt 5.0 T T Junction and Storage Temperature Range C -55 to +150 J, STG Thermal Resistance Ratings Symbol Parameter TypMax Units R JL 20 Junction-to-Drain Lead C/W R 50 JA Junction-to-Ambient Electrical Characteristics TJ = 25C (unless otherwise specified) Symbol Parameter Min TypMax Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.034 V/C Reference to 25C, I = 1mA D 0.011 V = 10V, I = 7.3A GS D R Static Drain-to-Source On-Resistance DS(on) 0.018 V = 4.5V, I = 3.7A GS D V GS(th) Gate Threshold Voltage1.03.0V V = V , I = 250A DS GS D g fs Forward Transconductance 10 S V = 10V, I = 3.7A DS D 12 V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 25 V = 24V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage-100 V = -20V GS I nA GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 52 79 I = 7.3A g D Q Gate-to-Source Charge 6.1 9.2 V = 24V gs DS nC Q gd Gate-to-Drain Mille) Charge 16 23 V = 10V, See Fig. 6 and 9 GS R G Gate Resistance 1.2 3.7 t Turn-On Delay Time 8.6 V = 15V d(on) DD t Rise Time 50 I = 7.3A r D ns t d(off) Turn-Off Delay Time 52 R = 6.2 G t f Fall Time 46 R = 2.0, See Fig. 10 G C iss Input Capacitance 1800 V = 0V GS C Output Capacitance 680 V = 25V oss pF DS C Reverse Transfer Capacitance 240 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 3.1 S (Body Diode) showing the A Pulsed Source Current integral reverse I 58 SM (Body Diode) p-n junction diode. V Diode Forward Voltage1.0V T = 25C, I = 7.3A, V = 0V SD J S GS t Reverse Recovery Time 74 110 ns T = 25C, I = 7.3A rr J F Q di/dt = 100A/s Reverse Recovery Charge 200 300 nC rr I %& & ( ) ) SD * + ,- 5 % ( 6 * . +,- / .0 1 2 . + 3 . %& 4 4 7 * 0 ,-