SMPS MOSFET IRF7463PbF Applications HEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rectification V R max I DSS DS(on) D for Telecom and Industrial use 30V 8m 14A High Frequency Buck Converters for Computer Processor Power Lead-Free Benefits A A 1 8 S D Ultra-Low Gate Impedance 2 7 S D Very Low R at 4.5V V DS(on) GS 3 6 S D Fully Characterized Avalanche Voltage 4 5 and Current G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 30 V DS V Gate-to-Source Voltage 12 V GS I T = 25C Continuous Drain Current, V 10V 14 D A GS I T = 70C Continuous Drain Current, V 10V 11 A D A GS I Pulsed Drain Current 110 DM P T = 25C Maximum Power Dissipation 2.5 W D A P T = 70C Maximum Power Dissipation 1.6 W D A Linear Derating Factor 0.02 mW/C T , T Junction and Storage Temperature Range -55 to + 150 C J STG Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 50 C/W JA Notes through are on page 8 www.irf.com 1 IRF7463PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.029 V/C Reference to 25C, I = 1mA (BR)DSS J D 6.0 8.0 V = 10V, I = 14A GS D m R Static Drain-to-Source On-Resistance DS(on) 7.0 9.5 V = 4.5V, I = 11A GS D 10.5 20 V = 2.7V, I = 7.0A GS D V Gate Threshold Voltage 0.6 2.0 V V = V , I = 250A GS(th) DS GS D 20 V = 24V, V = 0V DS GS A I Drain-to-Source Leakage Current DSS 100 V = 24V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 12V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -12V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 41 S V = 24V, I = 11A fs DS D Q Total Gate Charge 34 51 I = 11A g D Q Gate-to-Source Charge 7.6 11.4 nC V = 15V gs DS Q Gate-to-Drain Mille) Charge 12 18 V = 4.5V gd GS Q Output Gate Charge 21 32 V = 0V, V = 15V oss GS DS t Turn-On Delay Time 16 V = 15V d(on) DD t Rise Time 138 I = 11A r D ns t Turn-Off Delay Time 28 R = 1.8 d(off) G t Fall Time 6.5 V = 4.5V f GS C Input Capacitance 3150 V = 0V iss GS C Output Capacitance 1070 V = 15V oss DS C Reverse Transfer Capacitance 180 pF = 1.0MHz rss Avalanche Characteristics Symbol Parameter Typ. Max. Units E Single Pulse Avalanche Energy 320 mJ AS I Avalanche Current 14 A AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.3 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 110 S (Body Diode) p-n junction diode. 0.52 1.3 V T = 25C, I = 11A, V = 0V J S GS V Diode Forward Voltage SD 0.44 T = 125C, I = 11A, V = 0V J S GS t Reverse Recovery Time 45 70 ns T = 25C, I = 11A, V =15V rr J F R Q Reverse Recovery Charge 65 100 nC di/dt = 100A/s rr t Reverse Recovery Time 50 75 ns T = 125C, I = 11A, V =15V rr J F R Q Reverse Recovery Charge 80 120 nC di/dt = 100A/s rr 2 www.irf.com