IRF7494PbF HEXFET Power MOSFET Applications V R max I DSS DS(on) D High frequency DC-DC converters 44m V = 10V 150V 5.1A Lead-Free GS Benefits A A Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 S D Effective C to Simplify Design, (See OSS App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage SO-8 and Current Top View Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 150 V V GS Gate-to-Source Voltage 20 I T = 25C 5.1 Continuous Drain Current, V 10V D A GS I T = 70C Continuous Drain Current, V 10V 4.0 A D A GS I 40 Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 2.5 W D A Linear Derating Factor 0.02 W/C dv/dt Peak Diode Recovery dv/dt 33 V/ns T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R JL 20 C/W Junction-to-Ambient (PCB Mount) R JA 50 Notes through are on page 8 www.irf.com 1 10/15/09IRF7494PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A (BR)DSS GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.13 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 35 44 V = 10V, I = 3.1A m GS D V GS(th) Gate Threshold Voltage 2.5 4.0 V V = V , I = 250A DS GS D I DSS Drain-to-Source Leakage Current 10 A V = 120V, V = 0V DS GS 250 V = 120V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 12 S V = 50V, I = 5.1A DS D Q Total Gate Charge 35 53 I = 3.1A g D Q Gate-to-Source Charge 6.4 nC V = 75V gs DS Q gd Gate-to-Drain Mille) Charge 13 V = 10V GS t d(on) Turn-On Delay Time 9 V = 75V DD t r Rise Time 10 I = 3.1A D t d(off) Turn-Off Delay Time 29 ns R = 6.8 G t f Fall Time 14 V = 10V GS C Input Capacitance 1783 V = 0V iss GS C Output Capacitance 222 V = 25V oss DS C Reverse Transfer Capacitance 104 pF = 1.0MHz rss C oss Output Capacitance 886 V = 0V, V = 1.0V, = 1.0MHz GS DS C oss Output Capacitance 121 V = 0V, V = 120V, = 1.0MHz GS DS C eff. oss Effective Output Capacitance 189 V = 0V, V = 0V to 120V GS DS Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 262 mJ Avalanche Current I 3.1 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.3 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 40 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 3.1A, V = 0V SD J S GS t Reverse Recovery Time 45 ns T = 25C, I = 3.1A, V = 25V DD rr J F di/dt = 100A/s Q Reverse Recovery Charge 93 nC rr 2 www.irf.com