PD - 95212A IRF7809AVPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses A A Minimizes Parallel MOSFETs for high current 1 8 S D applications 2 7 S D 100% Tested for Rg Lead-Free 3 6 S D Description 4 5 G D This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced SO-8 Top View conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. DEVICE CHARACTERISTICS The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including IRF7809AV R , gate charge and Cdv/dt-induced turn-on immunity. DS(on) The IRF7809AV offers particulary low R and high R 7.0m DS(on) DS(on) Cdv/dt immunity for synchronous FET applications. Q 41nC G The package is designed for vapor phase, infra-red, Q 14nC sw convection, or wave soldering techniques. Power Q 30nC oss dissipation of greater than 2W is possible in a typical PCB mount application. Absolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V 12 GS Continuous Drain or Source T = 25C I 13.3 A D Current (V 4.5V) T = 90C 14.6 A GS L Pulsed Drain Current I 100 DM Power Dissipation T = 25C P 2.5 W A D T = 90C 3.0 L Junction & Storage Temperature Range T ,T 55 to 150 C J STG Continuous Source Current (Body Diode) I 2.5 A S Pulsed Source Current I 50 SM Thermal Resistance Parameter Max. Units Maximum Junction-to-Ambient R 50 C/W JA Maximum Junction-to-Lead R 20 C/W JL 08/23/05IRF7809AVPbF Electrical Characteristics Parameter Min Typ Max Units Conditions Drain-to-Source BV 30 V V = 0V, I = 250A DSS GS D Breakdown Voltage Static Drain-Source R 7.0 9.0 m V = 4.5V, I = 15A DS(on) GS D on Resistance Gate Threshold Voltage V 1.0 V V = V ,I = 250A GS(th) DS GS D Drain-Source Leakage I 30 V = 24V, V = 0 DSS DS GS Current Current* 150 A V = 24V, V = 0, DS GS Tj = 100C Gate-Source Leakage I 100 nA V = 12V GSS GS Current* Total Gate Chg Cont FET Q 41 62 V =5V, I =15A, V =20V G GS D DS Total Gate Chg Sync FET Q 36 54 V = 5V, V < 100mV G GS DS Pre-Vth Q 7.0 V = 20V, I = 15A GS1 DS D Gate-Source Charge Post-Vth Q 2.3 nC GS2 Gate-Source Charge Gate to Drain Charge Q 12 I =15A, V =16V GD D DS Switch Chg(Q + Q ) Q 14 21 gs2 gd sw Output Charge* Q 30 45 V = 16V, V = 0 oss DS GS Gate Resistance R 1.5 3.0 G Turn-on Delay Time t 14 V = 16V, I = 15A d (on) DD D Rise Time t 36 ns V = 5V r GS Turn-off Delay Time t 96 Clamped Inductive Load d (off) Fall Time t 10 f Input Capacitance C 3780 iss Output Capacitance C 1060 pF V = 16V, V = 0 oss DS GS Reverse Transfer Capacitance C 130 rss Source-Drain Rating & Characteristics Parameter Min Typ Max Units Conditions Diode Forward V 1.3 V I = 15A , V = 0V SD S GS Voltage* Reverse Recovery Q 120 nC di/dt ~ 700A/s rr Charge V = 16V, V = 0V, I = 15A DS GS S Reverse Recovery Q 150 nC di/dt = 700A/s rr(s) Charge (with Parallel (with 10BQ040) Schottky) V = 16V, V = 0V, I = 15A DS GS S Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 400 s duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Q oss Typical values measured at V = 4.5V, I = 15A. GS F 2 www.irf.com