IRF8513PbF HEXFET Power MOSFET Applications V I R max DSS D DS(on) Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, 15.5m V = 10V Q1 8.0A GS Graphics Cards, Game Consoles 30V 12.7m V = 10V Q2 11A GS and Set-Top Box Benefits Low Gate Charge and Low R DS(on) Fully Characterized Avalanche Voltage and Current 20V V Max. Gate Rating GS 100% Tested for R G Lead-Free (Qualified to 260C Reflow) RoHS Compliant (Halogen Free) SO-8 Description The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8513PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications. Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 8.0 11 D A GS I T = 70C Continuous Drain Current, V 10V 6.2 9.0 A D A GS Pulsed Drain Current I 64 88 DM P T = 25C Power Dissipation 1.5 2.4 D A W P T = 70C Power Dissipation 1.05 1.68 D A Linear Derating Factor 0.01 0.02 W/C T Operating Junction and J -55 to + 175 C T Storage Temperature Range STG Thermal Resistance Parameter Q1 Max. Q2 Max. Units Junction-to-Drain Lead R 42 42 JL C/W R 100 62.5 JA Junction-to-Ambient Notes through are on page 11 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. www.irf.com 1 11/05/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage Q1&Q2 30 V DSS GS D V /T Breakdown Voltage Temp. Coefficient Q1 0.021 DSS J V/C Reference to 25C, I = 1mA D Q2 0.021 V = 10V, I = 8.0A Q1 12.5 15.5 GS D R V = 4.5V, I = 6.4A Static Drain-to-Source On-Resistance 18.1 22.2 DS(on) GS D m V = 10V, I = 11A Q2 10.2 12.7 GS D V = 4.5V, I = 8.6A 14.2 16.9 GS D V Q1: V = V , I = 25A Gate Threshold Voltage Q1&Q2 1.35 1.8 2.35 V DS GS D GS(th) Q2: V = V , I = 25A V /T Gate Threshold Voltage Coefficient Q1 -6.5 DS GS D GS(th) J mV/C Q2 -6.9 V = 24V, V = 0V I Drain-to-Source Leakage Current Q1&Q2 1.0 DS GS DSS A Q1&Q2 150 V = 24V, V = 0V, T = 125C DS GS J V = 20V I Gate-to-Source Forward Leakage Q1&Q2 100 GS GSS nA V = -20V Gate-to-Source Reverse Leakage Q1&Q2 -100 GS V = 15V, I = 6.4A gfs Forward Transconductance Q1 19 DS D S V = 15V, I = 8.6A Q2 24 DS D Q Total Gate Charge Q1 5.7 8.6 g Q2 7.6 11.4 Q Pre-Vth Gate-to-Source Charge Q1 1.2 Q1 gs1 Q2 1.7 V = 15V DS Q Post-Vth Gate-to-Source Charge Q1 0.68 V = 4.5V, I = 6.4A gs2 GS D Q2 1.0 nC Q Gate-to-Drain Charge Q1 2.2 Q2 gd Q2 3.1 V = 15V DS Q Gate Charge Overdrive Q1 1.6 V = 4.5V, I = 8.6A godr GS D Q2 1.9 Q Switch Charge (Q + Q ) Q1 2.9 See Fig. 31a &31b sw gs2 gd Q2 4.0 V = 16V, V = 0V Q Output Charge Q1 3.9 DS GS oss nC Q2 5.2 R Gate Resistance Q1 2.1 3.2 G Q2 1.4 3.1 t Turn-On Delay Time Q1 8.0 Q1 d(on) V = 15V, V = 4.5V Q2 8.9 DD GS t Rise Time Q1 8.5 I = 6.4A r D Q2 10.7 R = 1.8 See Fig.30a & 30b G ns t Turn-Off Delay Time Q1 8.8 Q2 d(off) V = 15V, V = 4.5V Q2 9.3 DD GS t Fall Time Q1 5.7 I = 8.6A f D Q2 5.0 RG = 1.8W C Input Capacitance Q1 766 iss Q2 1024 V = 0V GS V = 15V C Output Capacitance Q1 172 DS oss pF Q2 238 = 1.0MHz C Reverse Transfer Capacitance Q1 83 rss Q2 116 Avalanche Characteristics Parameter Typ. Q1 Max. Q2 Max. Units E Single Pulse Avalanche Energy 49 70 mJ AS I Avalanche Current 6.4 8.6 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current Q1 1.9 MOSFET symbol S A (Body Diode) Q2 3.0 showing the I Pulsed Source Current Q1 64 integral reverse SM A (Body Diode) Q2 88 p-n junction diode. T = 25C, I = 6.4A, V = 0V V Diode Forward Voltage Q1 1.0 J S GS SD V T = 25C, I = 8.6A, V = 0V Q2 1.0 J S GS Q1 T = 25C, I = 6.4A, t Reverse Recovery Time Q1 15 23 J F rr ns V = 15V, di/dt = 100A/s Q2 17 26 DD Q2 T = 25C, I = 8.6A, Q Reverse Recovery Charge Q1 7.2 11 J F rr nC Q2 9.3 14 VDD = 15V, di/dt = 100A/s t Intrinsic turn -on time is negligible (turn -on is dominated by LS+LD) Forward Trun-On Time on 2 www.irf.com