PD - 95884 IRFB4215 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V = 60V DSS Dynamic dv/dt Rating 175C Operating Temperature R = 9.0m DS(on) G Fast Switching Fully Avalanche Rated I = 115A D Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 115 D C GS I T = 100C Continuous Drain Current, V 10V 81 A D C GS I Pulsed Drain Current 360 DM P T = 25C Power Dissipation 270 W D C Linear Derating Factor 1.8 W/C V Gate-to-Source Voltage 20 V GS I Avalanche Current 85 A AR E Repetitive Avalanche Energy 18 mJ AR dv/dt Peak Diode Recovery dv/dt 4.7 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.56 JC Case-to-Sink, Flat, Greased Surface 0.24 C/W R CS R Junction-to-Ambient 40 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.066 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 9.0 m V = 10V, I = 54A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 61 S V = 25V, I = 54A fs DS D 25 V = 60V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 48V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 170 I = 64A g D Q Gate-to-Source Charge 39 nC V = 48V gs DS Q Gate-to-Drain Mille) Charge 59 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 22 V = 30V d(on) DD t Rise Time 160 I = 64A r D ns t Turn-Off Delay Time 77 R = 6.2 d(off) G t Fall Time 110 V = 10V, See Fig. 10 f GS D Between lead, L Internal Drain Inductance D 6mm (0.25in.) nH G from package L Internal Source Inductance S and center of die contact S C Input Capacitance 4080 V = 0V iss GS C Output Capacitance 840 V = 25V oss DS C Reverse Transfer Capacitance 180 pF = 1.0MHz, See Fig. 5 rss E Single Pulse Avalanche Energy 1080 220 mJ I = 90A, L = 54H AS AS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 115 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 360 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.2 V T = 25C, I = 90A, V = 0V SD J S GS t Reverse Recovery Time 78 120 ns T = 25C, I = 64A rr J F Q Reverse Recovery Charge 250 380 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by Pulse width 400s duty cycle 2%. max. junction temperature. (See fig. 11) This is a typical value at device destruction and represents operation outside rated limits. Starting T = 25C, L = 60H J This is a calculated value limited to T = 175C . J R = 25, I = 85A, V =10V (See Figure 12) G AS GS This is tested with same test conditions as the existing data sheet I 90A di/d 250A/s, V V , SD DD (BR)DSS Calculated continuous current based on maximum allowable T 175C J junction temperature. Package limitation current is 75A. 2 www.irf.com