IRFH5004PbF HEXFET Power MOSFET V 40 V DS R DS(on) max 2.6 m ( V = 10V) GS Q 73 nC g (typical) R 1.2 G (typical) I D 100 A ( T = 25C) PQFN 5X6 mm mb Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low R ( 2.6m ) Lower Conduction Losses DSon Low Thermal Resistance to PCB (0.8C/W) Enables better thermal dissipation 100% Rg tested Increased Reliability Low Profile ( 0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Base Part Number Package Type Standard Pack Orderable part number Form Quantity IRFH5004PBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5004TRPBF PQFN 5mm x 6mm Tape and Reel 1000 IRFH5004TR2PBF Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 40 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 28 D A GS I T = 70C Continuous Drain Current, V 10V 23 D A GS A I T = 25C Continuous Drain Current, V 10V 100 D mb GS I T = 100C Continuous Drain Current, V 10V 100 D mb GS Pulsed Drain Current I 400 DM Power Dissipation P T = 25C 3.6 D A W P T = 25C Power Dissipation 156 D mb Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 8 www.irf.com 1 10/02/12 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250 A DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.04 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 2.1 2.6 V = 10V, I = 50A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V GS(th) V = V , I = 150 A DS GS D V Gate Threshold Voltage Coefficient -5.6 mV/C GS(th) I Drain-to-Source Leakage Current 20 V = 40V, V = 0V DSS DS GS A 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 91 S V = 15V, I = 50A DS D Q Total Gate Charge 73 110 g Q Pre-Vth Gate-to-Source Charge 15 V = 20V gs1 DS Q Post-Vth Gate-to-Source Charge 6.1 V = 10V gs2 GS nC Q Gate-to-Drain Charge 27 I = 50A gd D Q Gate Charge Overdrive 25 See Fig.17 & 18 godr Q Switch Charge (Q + Q ) 33.1 sw gs2 gd Q Output Charge 27 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.2 G t Turn-On Delay Time 13 V = 20V, V = 10V d(on) DD GS t Rise Time 39 I = 50A r D ns t Turn-Off Delay Time 28 R =1.8 d(off) G t Fall Time 16 See Fig.15 f C Input Capacitance 4490 V = 0V iss GS C Output Capacitance 970 pF V = 20V oss DS C Reverse Transfer Capacitance 460 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 340 mJ AS Avalanche Current I 50 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 100 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 400 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 32 48 ns T = 25C, I = 50A, V = 20V rr J F DD Q di/dt = 300A/ s Reverse Recovery Charge 100 150 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units R Junction-to-Mounting Base 0.5 0.8 JC-mb Junction-to-Case R (Top) 15 C/W JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 33 JA 2 www.irf.com