IRFH8330PbF HEXFET Power MOSFET V 30 V DS V V GS max 20 R DS(on) max 6.6 ( V = 10V) GS m ( V = 4.5V) 9.9 GS Q 9.3 nC g typ. PQFN 5X6 mm I D 25 A ( T = 25C) c(Bottom) Applications Control MOSFET for high frequency buck converters Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 3.6C/W) Enable better thermal dissipation Low Profile (<1.2mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Orderable part number Package Type Standard Pack Note Form Quantity IRFH8330TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH8330TR2PBF PQFN 5mm x 6mm Tape and Reel 400 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 17 D A GS I T = 70C Continuous Drain Current, V 10V 14 A GS D I T = 25C Continuous Drain Current, V 10V 56 GS D C(Bottom) Continuous Drain Current, V 10V 36 A I T = 100C D C(Bottom) GS Continuous Drain Current, V 10V (Source Bonding GS 25 I T = 25C D C Technology Limited) Pulsed Drain Current I 210 DM Power Dissipation P T = 25C 3.3 D A W Power Dissipation P T = 25C 35 C(Bottom) D Linear Derating Factor 0.026 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 www.irf.com 1 03/30/12 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250 A DSS GS D V /T Breakdown Voltage Temp. Coefficient 23 mV/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 5.3 6.6 V = 10V, I = 20A DS(on) GS D m 7.7 9.9 V = 4.5V, I = 16A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V V = V , I = 25 A GS(th) DS GS D V Gate Threshold Voltage Coefficient -6.3 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 61 S V = 10V, I = 20A DS D Q Total Gate Charge 20 nC V = 10V, V = 15V, I = 20A g GS DS D Q Total Gate Charge 9.3 g Q Pre-Vth Gate-to-Source Charge 2.7 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.6 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 2.5 I = 20A gd D Q Gate Charge Overdrive 2.5 godr Q Switch Charge (Q + Q ) 4.1 sw gs2 gd Q Output Charge 7.1 nC V = 16V, V = 0V oss DS GS R G Gate Resistance 1.8 t Turn-On Delay Time 9.2 V = 30V, V = 4.5V d(on) DD GS t Rise Time 15 I = 20A r D ns t Turn-Off Delay Time 10 R =1.8 d(off) G t Fall Time 5.7 f C Input Capacitance 1450 V = 0V iss GS C Output Capacitance 250 pF V = 25V oss DS C Reverse Transfer Capacitance 110 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 52 mJ AS Avalanche Current I 20 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 20 showing the (Body Diode) A G I Pulsed Source Current integral reverse SM 210 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 20A, V = 0V SD J S GS t Reverse Recovery Time 14 21 ns T = 25C, I = 20A, V = 15V rr J F DD Q di/dt = 390 A/ s Reverse Recovery Charge 23 35 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 3.6 JC Junction-to-Case R (Top) 40 C/W JC Junction-to-Ambient R 38 JA Junction-to-Ambient R (<10s) 25 JA 2 www.irf.com