IRFHM8326PbF HEXFET Power MOSFET V 30 V DSS V max 20 V GS R max DS(on) 4.7 G ( V = 10V) GS m S S S ( V = 4.5V) 6.7 GS D Qg 20 nC D (typical) D D I D D 70 A ( T = 25C) C (Bottom) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for Buck Converters Features Benefits Low Thermal Resistance to PCB (<3.4C/W) Enable better thermal dissipation Low Profile (<1.05 mm) Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility results in Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFHM8326PbF PQFN 3.3 mm x 3.3 mm Tape and Reel 4000 IRFHM8326TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 19 D A GS I T = 70C Continuous Drain Current, V 10V 15 D A GS I T = 25C Continuous Drain Current, V 10V 70 D C(Bottom) GS A I T = 100C Continuous Drain Current, V 10V 44 D C(Bottom) GS I T = 25C Continuous Drain Current, V 10V (Source Bonding 25 D C GS Technology Limited) I Pulsed Drain Current 278 DM P T = 25C Power Dissipation 2.8 D A W P T = 25C Power Dissipation 37 D C(Bottom) Linear Derating Factor 0.023 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 1 2016-2-23 IRFHM8326PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 22 mV/C Reference to 25C, I = 1mA BV / T D DSS J R Static Drain-to-Source On-Resistance 3.8 4.7 V = 10V, I = 20A DS(on) GS D m 5.2 6.7 V = 4.5V, I = 20A GS D V Gate Threshold Voltage 1.2 1.7 2.2 V GS(th) V = V , I = 50A DS GS D Gate Threshold Voltage Coefficient -10 mV/C V GS(th) I Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 70 S V = 10V, I = 20A DS D Q Total Gate Charge 39 nC V = 10V, V = 15V, I = 20A g GS DS D Q Total Gate Charge 20 30 g Q Pre-Vth Gate-to-Source Charge 4.8 V = 15V DS gs1 Q Post-Vth Gate-to-Source Charge 2.6 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 6.5 I = 20A gd D Q Gate Charge Overdrive 6.1 godr Q Switch Charge (Q + Q) 9.1 sw gs2 gd Q Output Charge 11 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.9 G t Turn-On Delay Time 12 V = 15V, V = 4.5V d(on) DD GS t Rise Time 35 ns I = 20A r D t Turn-Off Delay Time 18 R =1.8 d(off) G t Fall Time 12 f C Input Capacitance 2496 V = 0V iss GS pF V = 10V C Output Capacitance 524 oss DS C Reverse Transfer Capacitance 273 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. E Single Pulse Avalanche Energy 58 AS I Avalanche Current 20 AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 25 (Body Diode) showing the A G integral reverse I Pulsed Source Current SM 278 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 20A, V = 0V SD J S GS t Reverse Recovery Time 15 23 ns T = 25C, I = 20A, V = 15V rr J F DD Q Reverse Recovery Charge 14 21 nC di/dt = 300A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 3.4 R (Bottom) JC Junction-to-Case 41 C/W R (Top) JC Junction-to-Ambient 44 R JA Junction-to-Ambient 31 R (<10s) JA 2 2016-2-23